ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
As silicon ICs continue to scale down, several reliability issues have emerged.Electromigration- the transportation of metallic atoms by the electron wind- has been recognized asone of the key damage mechanisms in metallic interconnects. It is known that there is a thresholdcurrent density of electromigration damage in via-connected lines. The evaluation of the thresholdcurrent density is a matter of the great interest from the viewpoint of IC reliability. In this study, Alpolycrystalline lines with two-dimensional shape, i.e. angled lines are experimentally treated for theevaluation. Comparing the experimental result with that of straight-shaped line, the effect ofline-shape on the threshold current density of electromigration damage is discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.353-358.2958.pdf
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