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  • 1
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4549-4555 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrasonic-force microscopy (UFM) has been employed to carry out nanometer-scale mechanical imaging of integrated circuit (IC) test structures comprised of 0.32-μm-wide aluminum interconnect lines inlaid in a low-dielectric-constant (low-k) polymer film. Such inlaid metal interconnects are typically referred to as damascene structures. UFM clearly differentiates the metal and polymer regions within this damascene IC test structure on the basis of elastic modulus with a spatial resolution≤10 nm. In addition, this technique reveals an increase in the polymer elastic modulus at the metal/polymer interface. This nanometer-scale hardening corresponds to compositional modification of the polymer from the reactive ion etch (RIE) process used to form trenches in the polymer film prior to metal deposition. The reported direct, nondestructive nanometer-scale mechanical imaging of RIE-process-induced modifications of low-k polymers in IC test structures offers expanded opportunities for mechanical metrology and reliability evaluation of such materials. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1099-1103 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The advent of microcalorimetry for x-ray detectors holds the promise for high-resolution compositional microanalysis applicable to nanometer-scale devices and structures. To demonstrate this capability, microcalorimeter-based energy dispersive x-ray spectroscopy (EDS) has been used to analyze ultrathin TaSiN films under development as ion diffusion barriers in sub-0.1 μm integrated circuit interconnect structures. Microanalysis of TaSiN films has been carried out using microcalorimetry-based EDS for comparison with similar data acquired using conventional Si(Li) EDS detectors. The elimination of elemental peak overlaps provided by the improved energy resolution of the microcalorimeter x-ray detector is demonstrated for TaSiN EDS spectra from films as thin as 3.5 nm. In addition, variation of the electron probe beam energy is examined to reduce the x-ray generation volume relative to the TaSiN film thickness. It is shown that microcalorimetery-based EDS is a potentially powerful technique for the characterization/metrology of ultrathin barrier films used for microelectronics, with x-ray energy-resolving capabilities similar to techniques such as wavelength dispersive spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1405-1407 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic pyroelectric response in the smectic-C* (SmC*) phase of a novel class of polysiloxane terpolymers is reported. In these terpolymers methyl groups and two distinct types of mesogenic side chains are attached to the siloxane backbone. Our investigations reveal that the magnitude and temperature dependence of the pyroelectric signal, as well as the temperature range of the SmC* phase, can be controlled by varying the relative side-chain composition. This permits optimization of the pyroelectric properties over a temperature range extending to subambient. Specifically, the pyroelectric coefficient p can be made very nearly temperature independent, and the ratio p/ε′ extremely high, making these materials suitable for uncooled infrared detectors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2937-2939 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative study of the effect of electric field on the stripe domains formed by layer deformation in chiral smectic A liquid crystals is presented. X-ray diffraction studies reveal that the angle between the layer normals in adjacent stripe domains increases with increasing electric field. A simple model is presented to derive the true molecular tilt angle from optical transmission measurements. The relationship between the optical tilt angle and the tilt angle evaluated from x-ray measurements of the smectic layer thickness indicates that the molecules are tilting as rigid rods. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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