Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Two independent magnetic sublattices of Er in the Er"5" "-" "x La"xGe"3 system
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 35 (1974), S. 581-584 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0022-3697(74)80012-0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Two independent magnetic sublattices of Er in the Er"5" "-" "x La"xGe"3 system
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 35 (1974), S. 581-584 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0022-3697(74)80012-0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3314-3318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition from mixtures of tetramethylsilane with oxygen. The films have been characterized as-deposited and after annealing at 400 °C to determine the thermal stability of their properties. Rutherford backscattering and forward recoil elastic scattering have been used for determination of the composition of the films. Optical properties were characterized by Fourier transform infrared spectroscopy and measurements of the index of refraction and optical gap. The electrical properties were measured in a Si/insulator/metal configuration. It has been found that the index of refraction decreases and the optical gap and dielectric constant increase with increasing oxygen concentration in the gas feed. While the materials did not show a mass or composition loss after annealing, the annealing resulted in a reduction of the dielectric constant of the films. Dielectric constants as low as 3.1 have been obtained after annealing the film deposited from pure tetramethylsilane. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369677
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Correlations between plasma parameters and the deposition of microcrystalline silicon films by plasma of argon and hydrogen (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2044-2049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dissociation of chlorosilanes to microcrystalline silicon and its deposition on a solid substrate in a rf plasma of mixtures of argon and hydrogen was investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of silicon in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net rf power input, and location in the plasma reactor were found to strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and to the role of hydrogen chloride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339852
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Inhomogeneous carbon bonding in hydrogenated amorphous carbon films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2874-2877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard-carbon films prepared by the rf-plasma decomposition of acetylene have been investigated by high-resolution 13C nuclear magnetic resonance spectroscopy, x-ray photoelectron spectroscopy (XPS), and the H(15Nα,γ)C nuclear resonant reaction. It was found that the ratio of sp2:sp3 bound carbon was 1.6, and that virtually all sp3 carbon atoms are, in fact, bound to one or more hydrogen atoms. Bulk layers contain about 40% hydrogen; however, results of the measurements of the hydrogen concentration, as well as those of XPS, confirm that the composition and properties of these carbon films are a strong function of their distance from the initial growth interface, and are spatially varying over the first 40 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337883
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 803-805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392976
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 802-813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The integration of noble metal electrodes into semiconductor memory devices incorporating ferroelectric or high dielectric constant ε materials is expected to require deposition of a conductive, oxidation-resistant barrier material between the noble metal and the silicon contact. Described is an alternative type of barrier layer structure which is formed as buried, self-aligned layer during oxygen-ambient annealing after noble metal deposition on silicon-contributing substrates. Reactions of Pt(20 nm) and Ir(20 nm) films with substrates of single crystalline silicon (c-Si), polycrystaline silicon (poly-Si), and tungsten silicide (WSix/Si with x=2.4–2.8) were examined after anneals in atmospheric pressure ambients of oxygen or nitrogen at temperatures of 640–700 °C, a temperature range of interest for high-epsilon materials deposition. While Pt(20 nm) films reacted with silicon and WSix/Si during oxygen annealing to form a mixture of Pt silicides and Pt, Ir(20 nm) films on the same substrates did not form any iridium silicides during oxygen annealing. In all cases, unreacted noble metal M was left due to the formation of an oxygen-containing M–O–Si barrier which interfered with the silicidation reaction. In contrast to these results for oxygen annealing, the Pt and Ir films were completely consumed by silicidation reactions during anneals in nitrogen. Qualitative through-film resistance measurements indicated that the M–O–Si barrier layers formed during oxygen annealing were at least moderately conductive for the cases of M=Ir on silicon and M=Ir or Pt on WSi2.8(300 nm)/Si, a prerequisite for the use of these electrode barrier structures in high-density dynamic random access memory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366761
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Characterization of diamondlike carbon by infrared spectroscopy? (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2089-2091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of Fourier transform infrared (FTIR) absorption spectroscopy, high resolution 13C nuclear magnetic resonance spectroscopy, and hydrogen evaluation by forward recoil elastic scattering (FRES) measurements shows that FTIR cannot be used to determine the carbon hybridization or total hydrogen content of diamondlike carbon films (DLC). FTIR absorption reflects only the optically active hydrogen in the DLC and, using it together with FRES, it can provide an estimate of the unbound hydrogen contained in the films. The fraction of unbound hydrogen can reach values of up to ∼50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107098
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Characteristics of R.F. plasma nitrided titanium alloys
    Amsterdam : Elsevier
    Surface & Coatings Technology 36 (1988), S. 183-190 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0257-8972(88)90148-X
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Layer structure and mechanical properties of low pressure r.f. plasma nitrided Ti-6Al-4V alloy
    Amsterdam : Elsevier
    Surface & Coatings Technology 43-44 (1990), S. 745-755 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0257-8972(90)90017-7
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...