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  • 1
    Electronic Resource
    Electronic Resource
    Effect of the oxidation of TiN on the stability of the Al/TiN interface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 188-195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of TiN barriers deposited between Si or SiO2 substrates and AlSiCu metallic alloy contacts was investigated as a function of the sintering temperature and of the application of an oxidation step to the barrier. It was found that Al penetrates the barrier during the sintering at 450 °C for 1 h, which also results in the diffusion of Ti inside the Al alloy. This mutual interdiffusion increases with temperature but when oxygen is present at the barrier surface, the intensity of diffusion processes decreases considerably. It is also established that the barrier remains more stable on SiO2 than on the Si substrate. It is suggested that the better reaction resistance of oxidized TiN compared with oxygen-free nitride may be due to the blocking of fast-diffusion paths of Al diffusion by oxygen and subsequently the formation of Al2O3, AlN, and TiAl3 phases during sintering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362804
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of an oxygen plasma exposure on the reliability of a Ti/TiN contact metallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4438-4443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates that the exposure of a TiN barrier to an ex situ oxygen plasma results in a more stable TiN/AlSiCu interface up to temperatures of 600 °C as shown by the time-of-flight elastic recoil detection measurements. A quaternary phase diagram of the Al–Ti–O–N system was calculated in the range of temperatures between 450 and 550 °C and suggests that the stabilization of the TiN/AlSiCu interface is possible since oxidized TiN reacts with Al to form AlN, TiAl3 and Al2O3 at the interface. A Ti/TiN/(oxygen plasma exposure)/AlSiCu/TiN contact metallization in 1.2-μm-diam and 1.4-μm-deep straight wall contacts to 0.2-μm-deep N+ and P+ diffusions, to gate polysilicon as well as to capacitor polysilicon shows stable electrical results even after a [(450 °C, 60 min)+(500 °C, 60 min)+(550 °C, 60 min)] combined thermal stress. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361753
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3110-3115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous a-SixC1−x:H films with various compositions (0.2≤x≤0.8) were prepared by a radio frequency (rf 100 kHz) glow discharge decomposition of a silane and methane mixture diluted in argon. The deposition system used was a commercially available plasma enhanced chemical vapor deposition reactor allowing a high throughput (22 wafers of 4 in. diameter each run). The properties of the films such as thickness, density, and stress were investigated. The composition, including hydrogen content and Si/C ratio, and the structure of the films were systematically examined by means of several diagnostics including electron recoil detection, x-ray photoelectron spectroscopy, and infrared (IR) absorption analysis. Thickness and density of the films were dependent on the film composition, while the stress of the films was highly compressive (3×109–1×1010 dynes/cm2). Density was about 2.4 g/cm3 for nearly stoichiometric SiC films. The hydrogen content of the films was practically constant at 27 at. % over the whole investigated composition range. The IR analyses suggested that the structure of the silicon carbide films is inorganic-like over the whole range of compositions. From stoichiometric to carbon-rich films, the structure mainly consists of a tetrahedral network where silicon atoms are randomly replaced by carbon atoms and one hydrogen atom is bonded to silicon (SiH group). However, the presence of SiH2 groups and microvoids was observed in the structure of Si-rich silicon carbide films. Finally, the development of SiC membranes for x-ray lithography was presented including the control of film stress by means of rapid thermal annealing. Silicon carbide membranes of relatively high surface area (32×32 mm2) and showing high optical transparency (80%) were successfully fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351471
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  • 4
    Electronic Resource
    Electronic Resource
    The use of elastic recoil detection for stoichiometry determination of reactively evaporated TiN layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4233-4235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin TiN layers have been successfully produced by reactive evaporation combined with rapid thermal annealing. Their stoichiometry as a function of depth has been measured by elastic recoil detection combined with time-of-flight. It is shown that this technique is the most appropriate for stoichiometry determination of TiN layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354429
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  • 5
    Electronic Resource
    Electronic Resource
    The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 132-138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction (XRD) analysis was performed in order to determine the crystallographic phases formed in AlSiCu/TiN/Ti contact metallization multilayers of very large scale integration/ultralarge scale integration devices deposited over SiO2 and Si substrates as a function of the annealing temperatures, the oxidation treatment of the TiN diffusion barrier, the presence of a TiN antireflective coating (ARC) and the barrier thickness. The most striking results of this study are the formation of the Ti7Al5Si12 phase and the recrystallization of Al after a 550 °C annealing for a nonoxidized 50 nm TiN barrier deposited on Si substrate. This Ti7Al5Si12 phase formation and the Al recrystallization tend to be blocked when an oxidized TiN barrier is used. It is also suggested that an air break process tends to lower the junction spiking problems since Ti7Al5Si12 is believed to be detrimental to the contact metallization layers. These effects were very weak for the 95-nm-thick TiN barrier. In addition, a TiN-ARC layer reduces the Al recrystallization on SiO2 substrate. Even after an important Ti7Al5Si12 formation, the transmission electron microscopy results showed that a TiN layer is still present but probably ineffective from an electrical point of view. Although the 550 °C anneal produced important changes, no significant difference was observed between the XRD spectra after a 450 and a 500 °C anneal. The identified phases by the XRD analysis were in agreement with a calculated Al-Ti-O-N quaternary isotherm diagram. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366710
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  • 6
    Electronic Resource
    Electronic Resource
    Positron study of plasma-enhanced chemical vapor deposited silicon nitride films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2568-2574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation spectroscopy has been combined with Auger electron depth profiling, elastic recoil detection, Fourier-transform infrared spectroscopy, and capacitance-voltage measurements to study silicon nitride films grown by plasma-enhanced chemical vapor deposition. For silicon-rich films the positron lineshape parameter is very close to that of undefected silicon, consistent with a strong hydrogen passivation effect. With increasing nitrogen content in the films, there is an increase in the number of unpassivated vacancy complexes available to trap positrons prior to annihilation. Detailed analysis gives a measure of the electric field induced in the silicon substrate by the presence of charge trapped in the silicon nitride near the interface. These results agree qualitatively with electrical measurements. Both the charge and the electric field are found to decrease with increasing nitrogen content. Incorporation of a small amount of oxygen in the films leads to a suppression of the feature in the positron spectrum associated with vacancy complexes in favor of a spectrum typical of oxygen related defects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360115
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2834-2840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress evolution of plasma enhanced chemical vapor deposition a-SiC:H films was studied by increasing the annealing temperature from 300 to 850 °C. A large stress range from −1 GPa compressive to 1 GPa tensile was investigated. Infrared absorption, x-ray photoelectron spectroscopy, and elastic recoil detection analysis techniques were used to follow the Si-C, Si-H, and C-H absorption band evolutions, the Si2p and C1s chemical bondings, and the a-SiC:H film hydrogen content variations with the annealing temperatures, respectively. It is pointed out that the compressive stress relaxation is due to the hydrogenated bond (Si—H and C—H) dissociation, whereas the tensile stress is caused by additional Si—C bond formation. At high annealing temperatures, a total hydrogen content decrease is clearly observed. This total hydrogen loss is interpreted in terms of hydrogen molecule formation and outerdiffusion. The results are discussed and a quantitative model correlating the intrinsic stress variation to the Si—H, C—H, and Si—C bond density variations is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354635
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of reactively evaporated TiN layers for diffusion barrier applications (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1565-1570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin TiN layers have been successfully produced on Si and SiO2 by reactive evaporation combined with rapid thermal annealing. Results of composition, resistivity, and stress measurements on these layers are reported. The TiN layers have a resistivity around 40 μΩ cm and a high stress of between 1 and 6 GPa. The composition ratio of nitrogen to titanium, measured by elastic recoil detection (ERD), combined with time-of-flight, was found to vary between 0.8 and 1.0 depending on the deposition conditions. In addition to the stoichiometry determination, ERD also clearly shows the presence of a TiSi2 layer between the TiN and the Si substrate. It is also shown that good TiN layers can be produced by reactive evaporation for nitrogen partial pressures between 1.0 and 2.0×10−5 mbar and for titanium evaporation rates between 0.3 and 0.5 nm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356392
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  • 9
    Electronic Resource
    Electronic Resource
    Remote oxygen-containing hydrogen plasma treatment of porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8075-8079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of treatment with remote oxygen-containing hydrogen plasma on electrochemically etched porous silicon have been studied. X-ray photoelectron spectroscopy, infrared, and elastic recoil detection measurements showed the nonuniform incorporation of oxygen in the porous silicon layer. The amount of nitrogen increased while the carbon concentration dropped in the oxidized layer. The photoluminiscence (PL) intensity of plasma-treated films increased by up to a factor of approximately 70 compared to as-prepared samples, while the peak position was red shifted. The PL enhancement seems to be correlated with an O/Si ratio near 1.5. After treatment, bright PL was observed from a partially oxidized layer, covered by a SiO2 layer which could be several nm thick.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356550
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  • 10
    Electronic Resource
    Electronic Resource
    Photosensitivity in phosphorus-doped silica glass and optical waveguides (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 394-396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation of hydrogen loaded or flame brushed phosphorus doped, germanium free silica glass with a 193-nm ArF excimer laser changes the optical absorption at ultraviolet wavelengths by 40–140 dB/mm and the refractive index by more than 2×10−4. Bragg gratings with 90%–95% reflectivity are photoinduced in channel optical waveguides made from this glass. The thermal stability of the photosensitivity is measured by annealing up to 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112312
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