ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reviews the physics and the potential application of ion-implanted vacanciesfor high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygeneratingimplants prior to boron implantation, electrically active boron concentrationsapproaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, withoutthe use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineeringimplants (VEI) are activated far above solubility. Furthermore, in the case of appropriatelyengineered thin silicon films, this activation is stable with respect to deactivation and the dopingprofile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant withdecreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches atthe ‘32 nm node’ and beyond
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.573-574.295.pdf
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