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  • 1
    Electronic Resource
    Electronic Resource
    Tunneling spectroscopy in Ba"1"-"xK"xBiO"3
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 185-189 (1991), S. 234-240 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(91)91978-D
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  • 2
    Electronic Resource
    Electronic Resource
    Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 A(ring) Bi-Sr-Ca-Cu oxide thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 377-379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoemission spectroscopy to study the core level spectra of 200 A(ring) Bi-Sr-Ca-Cu oxide thin films, in the hope that the importance of the surface sensitivity of photoemission is minimized for these samples, whose thickness is only 6–7 unit cells. The samples were annealed in oxygen at temperatures ranging from 600 to 870 °C, over which temperature range the thin films are converted from an amorphous insulating phase to an ordered superconducting phase with Tc (R=0)=80 K. Regardless of the annealing temperature, the Cu 2p spectra of all films show satellite structure indicative of Cu2+ states. Even the spectrum of an as-deposited film has a satellite similar to those observed for the annealed films, including the superconducting film. The similarity of the satellite structure in the core level spectra for all films suggests that the Cu-O interactions, such as the Cu d-O p orbital charge transfer energies and the hopping integrals, remain similar when the oxides undergo the insulator-superconductor transition through high-temperature anneal. That is, the same local Cu-O interaction exists before and after the superconducting phase sets in. This implies that the Cu valence alone does not determine the properties of high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100971
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  • 3
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of superconducting (Rb,Ba)BiO3 (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2120-2122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The simple cubic perovskite (Rb,Ba)BiO3 can be grown at temperatures below 350 °C by molecular beam epitaxy using a rf plasma atomic oxygen source. Films with superconducting onsets in resistivity as high as 27 K are obtained without annealing. The epitaxy proceeds in the normal (100) orientation on {100} SrTiO3, despite a 10% lattice mismatch. (110) epitaxy and spotty reflection high-energy electron diffraction (RHEED) patterns are obtained on {100} MgO substrates, despite the good lattice match for (100) growth. Streaked and spotty RHEED patterns have been obtained on either substrate. Sticking coefficients for bismuth depend on the growth conditions, indicating that the epitaxy is partially controlled by desorption kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102343
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: "Temperature dependence of transition metal magnetism'' [J. Appl. Phys. 67, 4552 (1990)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3799-3799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347205
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of transition-metal magnetism (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4552-4554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A first-principles tight-binding formulation of the paramagnetic spin susceptibility is developed to study the temperature dependence of the magnetic properties of transition metals. The formulation, which includes many-body enhancements, has been successful in predicting magnetic ground-state properties. The present study introduces a temperature-dependent analytical tetrahedron method to perform Brillouin zone sums, and employs accurate Slater–Koster band structures for convenience. Critical temperatures and the temperature dependence of the spin-density wave characterizing antiferromagnetism are determined from instabilities of the paramagnetic state toward magnetic order. The Néel temperature of Cr and the Curie temperature of Fe found in this way are in good agreement with measured values. Nonzero critical temperatures are also found for alternate cubic structures of some transition metals, further supporting the prediction of ferromagnetism in bcc Mn, and antiferromagnetism in fcc Mn and expanded bcc Ti. The computed wave vector of the spin-density wave of Cr is found to increase along the Δ line with increasing temperature following observed trends.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344867
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  • 6
    Electronic Resource
    Electronic Resource
    Ion beam patterning of spin-on metalorganic precursors and formation of high Tc superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 802-804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique using ion beams to produce patterned thin films of the high-temperature perovskite superconductor YBa2Cu3O7−x from spin-on metalorganic precursors is described. Spin-coated precursor films are irradiated through a stencil mask with 2.5 MeV He+ ions, developed in solvent to remove unexposed material, and the remaining patterns are pyrolyzed. Black films of YBa2Cu3O7−x with pattern dimensions on the millimeter scale exhibit orientation with the c axis perpendicular to the film after heat treatments of 990 °C for 3 min. The conductivity of a highly oriented, ∼0.4-μm-thick patterned film is characterized by onset of the superconducting transition at 84 K and zero resistivity at 68 K, similar to those of an unirradiated film given the same thermal treatment. Studies on the nature of the ion beam exposed material are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100564
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  • 7
    Electronic Resource
    Electronic Resource
    Superconductor-insulator-superconductor tunneling in Ba1−xKxBiO3 grain boundaries (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2824-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared single grain boundaries of the superconductor Ba1−xKxBiO3 by growing epitaxial thin films of this compound on SrTiO3 bicrystal substrates. The four-terminal current-voltage characteristics of the grain boundaries showed clear superconductor- insulator-superconductor (SIS) tunneling behavior. The leakage at zero bias was smaller than 0.3% at 4.2 K. The differential conductance displayed sharp symmetric peaks at 2Δ close to 6.5 mV. At higher bias, an increase in conductance proportional to V2 was observed. The temperature dependence of the conductance was found to be in qualitative accord with conventional SIS theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110299
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  • 8
    Electronic Resource
    Electronic Resource
    All-high Tc Josephson tunnel junction: Ba1−xKxBiO3/Ba1−xKxBiO3 junctions (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 95-96 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated all-high Tc superconducting tunnel junctions in the material Ba1−xKxBiO3. The junctions are of very high quality and have a Josephson supercurrent. For the low-resistance junctions, the IcR product approaches the theoretical limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104402
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial solid-solution films of immiscible MgO and CaO (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1341-1343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metastable solid solutions in the MgO-CaO system grow readily on MgO at 300 °C by molecular beam epitaxy. The epitaxy displays both the reflection high-energy electron diffraction oscillations characteristic of layer-by-layer growth and the lattice rotations which have been related to island nucleation. Mg1−xCaxO solid solutions grow despite a larger miscibility gap than in any system for which epitaxial solid solutions have been grown. Epitaxial quenching of nonequilibrium solid solutions is possible because of the very low growth temperatures for rock-salt oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111928
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  • 10
    Electronic Resource
    Electronic Resource
    Penetration depth, microwave surface resistance, and gap ratio in NbN and Ba1−xKxBiO3 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 244-246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report values of the zero temperature magnetic penetration depth λ(0), microwave surface resistance Rs, and gap ratio 2Δ(0)/kBTc in technologically useful thin films of NbN and Ba1−xKxBiO3. A novel analysis technique was used to extract the absolute magnitude of λ(0) and 2Δ(0)/kBTc from shifts in resonant frequency of a parallel-plate resonator. For NbN and Ba1−xKxBiO3 values of λ(0)=3900±200 A(ring) and 3300±200 A(ring) were obtained, respectively. The gap ratios were found to be 2Δ(0)/kBTc=4.1±0.1 and 3.8±0.5, respectively, for Tc=16.3 K in NbN and Tc=17.2 K in Ba1−xKxBiO3. The surface resistance measurements on Ba1−xKxBiO3 represent the lowest values ever reported at microwave frequencies in this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111517
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