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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1131-1148 
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary In this work we demonstrate that efficient light emission at 1.54 μm can be achieved when Er ions are incorporated into crystalline Si or in heavily oxygen-doped amorphous and polycrystalline Si films (SIPOS). We have found that temperature quenching of photo- and electroluminescence, which is the major limitation towards the achievement of room temperature luminescence, can be strongly reduced by codoping these films with oxygen. This impurity is already present in as-prepared SIPOS and it is introduced by ion-implantation in crystalline Si. Er luminescence is obtained under both optical and electrical excitation and we demonstrate that excitation occurs through a carrier-mediated process. Electrical excitation is obtained by incorporating Er in properly designed device structures. It is found that this excitation can occur both through the recombination of hole-electron pairs and through impact excitation of the Er ions by hot electrons. These two mechanisms have different efficiencies and impact excitation is shown to prevail at room temperature. These data are presented and possible future developments are discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1258-1266 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When pumped with a 1.48 μm laser diode, Er-implanted Al2O3 ridge waveguides emit a broad spectrum consisting of several distinct peaks having wavelengths ranging from the midinfrared (1.53 μm) to the visible (520 nm). In order to explain these observations, three different upconversion mechanisms are considered: cooperative upconversion, excited state absorption, and pair-induced quenching. It is found that for samples with a high Er concentration (1.4 at. %), cooperative upconversion completely dominates the deexcitation of the Er3+ ions. For a much lower concentration (0.12 at. %), the influence of cooperative upconversion is strongly reduced, and another upconversion effect becomes apparent: excited state absorption. These conclusions are based on measurements of the luminescence emission versus pump intensity, and also on measured luminescence decay curves. The upconversion coefficient is found to be (4±1)×10−18 cm3/s; the excited state absorption cross section is (0.9±0.3)×10−21 cm2. It is shown that in spite of these upconversion effects, a high fraction of the Er3+ can be excited at low pump powers. For pump powers between 2 and 10 mW, the optimum Er concentration is calculated. The results show that for an Er concentration of 0.5 at. %, more than 2 dB/cm net optical gain is achievable at a pump power less than 10 mW. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6504-6510 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature electroluminescence at 1.54 μm is demonstrated in erbium-implanted oxygen-doped silicon (27 at. % O), due to intra-4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal-(Si:O, Er)-p+ silicon diodes. The 30-nm-thick Si:O, Er films are amorphous layers deposited onto silicon substrates by chemical-vapor deposition of SiH4 and N2O, doped by ion implantation with Er to a concentration up to ≈1.5 at. %, and annealed in a rapid thermal annealing furnace. The most intense electroluminescence is obtained in samples annealed at 400 °C in reverse bias under breakdown conditions and it is attributed to impact excitation of erbium by hot carriers injected from the Si into the Si:O, Er layer. The electrical characteristics of the diode are studied in detail and related to the electroluminescence characteristics. A lower limit for the impact excitation cross section of ≈6×10−16 cm2 is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1256-1262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical activation, excitation, and concentration limits of erbium in crystal Si are studied. Preamorphized surface layers of Czochralski-grown (Cz) Si(100), containing 1.7×1018 O/cm3, were implanted with 250 keV Er at fluences in the range 8×1011–8×1014 cm−2. After thermal solid-phase epitaxy of the Er-doped amorphous layers at 600 °C, Er is trapped in the crystal at concentrations ranging from 3×1016 to 7×1019 Er/cm3, as measured by secondary-ion-mass spectrometry. Photoluminescence spectra taken at 77 K show the characteristic Er3+ intra-4f luminescence at 1.54 μm. Photoluminescence excitation spectroscopy shows that Er is excited through a photocarrier-mediated process. Rapid thermal annealing at 1000 °C for 15 s increases the luminescence intensity, mainly due to an increase in minority-carrier lifetime, which enhances the excitation efficiency. Luminescent Er forms clusters with oxygen: the maximum Er concentration that can be optically activated is determined by the O content, and is (3±1)×1017 Er/cm3 in Cz-Si. The internal quantum efficiency for electrical excitation of Er in Cz-Si is larger than 3×10−6. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2644-2647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen-doped Si epitaxial films (OXSEF) grown by molecular beam epitaxy and subsequently implanted with Er show room-temperature luminescence around λ=1.54 μm. The 45-nm-thick films have an oxygen concentration of 10 at. % and were implanted with 7.8×1014 25 keV Er ions/cm2. The luminescence was optically excited with the 514 nm line of an Ar ion laser and is attributed to intra-4f transitions in Er3+. Thermal annealing at 700–800 °C is necessary to optimize the luminescence after implantation. Pure Si implanted and annealed under the same conditions does not show Er-related luminescence at room temperature. The emission from Er in OXSEF is attributed to the high concentration of oxygen in the films, which forms complexes with Er. The excitation of Er3+ is due to a photocarrier mediated mechanism.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8179-8183 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soda-lime-silicate glass has been implanted with 500 keV Er ions at fluences between 8.6×1014 and 1.8×1016/cm2 with the aim to optically dope the material in the near surface region. The ion range was 100 nm, and Er concentrations in the range 0.09—1.9 at. % were obtained. The characteristic photoluminescence (PL) of Er3+ around 1.54 μm is observed at room temperature in as-implanted glass. The PL intensity increases by an order of magnitude after annealing above 500 °C, as a result of annihilation of implantation-induced defects. Annealing causes an increase in PL lifetime. As a function of Er fluence, the PL intensity first increases, but levels off above ∼6×1015 Er/cm2 (0.6 at. % Er peak concentration). The PL lifetime decreases from 13 to 1.5 ms for increasing Er concentration. The decrease in PL efficiency with concentration is attributed to concentration quenching caused by Er-Er interactions. The optimal combination of PL intensity and lifetime is reached at ≈0.4 at. % peak concentration, for which the lifetime is 6 ms. For high Er concentrations and high pump intensities (∼3 kW/cm2) an additional, intensity dependent quenching mechanism (possibly cooperative upconversion) is observed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2642-2650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of erbium-doped semi-insulating polycrystalline and amorphous silicon containing 30 at. % oxygen is studied. The films were deposited on single-crystal Si substrates by chemical vapor deposition, implanted with 500 keV Er to fluences ranging from 0.05 to 6×1015 ions/cm2, and annealed at 300–1000 °C. Upon optical pumping near 500 nm, the samples show room-temperature luminescence around 1.54 μm due to intra-4f transitions in Er3+, excited by photogenerated carriers. The strongest luminescence is obtained after 400 °C annealing. Two classes of Er3+ can be distinguished, characterized by luminescence lifetimes of 170 and 800 μs. The classes are attributed to Er3+ in Si-rich and in O-rich environments. Photoluminescence excitation spectroscopy on a sample with 1×1015 Er/cm2 shows that ∼2% of the implanted Er is optically active. No quenching of the Er luminescence efficiency is observed between 77 K and room temperature in this Si-based semiconductor. The internal quantum efficiency for the excitation of Er3+ via photogenerated carriers is 10−3 at room temperature. A model is presented which explains the luminescence data in terms of trapping of electrical carriers at localized Er-related defects, and subsequent energy transfer to Er3+ ions, which can then decay by emission of 1.5 μm photons. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2379-2381 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of erbium-implanted porous silicon is investigated. Room temperature 1.54 μm Er3+ luminescence is observed after annealing. The luminescence spectrum, annealing characteristics, temperature quenching, and the luminescence lifetime suggest that the Er3+ luminescence is mediated by photocarriers in the amorphous silicon matrix in porous silicon, and not related to the presence of the crystal nanograins. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 46-48 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3065-3067 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photoluminescence spectra centered at λ=1.533 μm, corresponding to intra-4f transitions in Er3+. At an Er peak concentration of 0.23 at. %, post-implantation thermal annealing up to 950 °C increases the photoluminescence intensity by a factor 40. This is a result of defect annealing, which increases the luminescence lifetime from 1 to 7 ms, as well as an increase in the Er3+ active fraction. High Er concentrations are achieved with only moderate concentration quenching effects.
    Type of Medium: Electronic Resource
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