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  • 1
    Electronic Resource
    Electronic Resource
    Effect of proton irradiation on the critical current and resistance of high Tc grain boundary Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of defects on the critical current and resistance of high Tc grain boundary Josephson junctions using irradiation with 2-MeV protons. Radiation-induced defects cause the critical current (Ic) to decrease and the shunt resistance (R) to increase such that IcR∝1/R. The data are consistent with a tunneling barrier height increasing with fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111089
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  • 2
    Electronic Resource
    Electronic Resource
    Field-induced magnetization of amorphous FexRu80−xB20 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5238-5239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an electron-spin resonance (ESR) technique at 10 GHz we have determined the temperature dependence of the field-induced magnetization in amorphous FexRu80−xB20 with 60≤x≤65. This concentration range includes a ferromagnet, a spin glass, and several reentrants. The ferromagnet displays typical T3/2 temperature dependence, while all other concentrations display the T dependence characteristic of spin glasses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344622
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  • 3
    Electronic Resource
    Electronic Resource
    Structural changes in InP/Si solar cells following irradiation with protons to very high fluences (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1230-1235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precisely how the short circuit current (JSC) is produced in a proton irradiated n+p InP/Si solar cell at very high fluence levels has been determined from combined measurements of the cell structure using electrochemical capacitance–voltage profiling and detailed analysis of the spectral quantum efficiency. Type conversion in the base region of the cell is shown to occur before an anomalous peak in the degradation curve for JSC is reached at high damage levels. The short circuit current, and hence the cell efficiency, ultimately collapse because the high absorption coefficient of InP eventually prevents the generation of electron–hole pairs close enough to the effective cell junction from being collected. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370876
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  • 4
    Electronic Resource
    Electronic Resource
    "Zero'' frequency spin relaxation in reentrant magnets (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4089-4090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the frequency and concentration dependence of Γ1, the parameter which characterizes the low-temperature increase in the magnetic resonance linewidth, for several reentrant magnets belonging to the alloy series (FepNi1−p)75G25 and (FepNi1−p)80G20. A comparison is made and it is shown that, near the spin-glass-reentrant transition concentration, the low-frequency dependence of Γ1 is dramatically different for these two apparently similar systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340558
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  • 5
    Electronic Resource
    Electronic Resource
    Irradiation effects in InGaAs/InAlAs high electron mobility transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2279-2281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation tolerance of high electron mobility transistors (HEMTs) based on InGaAs/InAlAs lattice matched to InP has been studied. At low fluences of 3 MeV He+ ions, the only effect is a reduction in the leakage currents. At higher fluences, the drain current decreases, the threshold voltage increases toward zero, and the transconductance decreases. These results are consistent with increased trapping in the donor layer and increased scattering in the channel layer. Radiation-induced increases in the threshold voltage occur three to nine times more slowly here than in GaAs/AlGaAs HEMTs, indicating high radiation tolerance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408904
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  • 6
    Electronic Resource
    Electronic Resource
    Proton-induced disorder in InP-based resonant tunneling diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 280-282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated arrays of resonant tunneling diodes based on InP substrates for exposure at room temperature with fluences of 3 MeV protons up to 7×1014 H+/cm2. Proton fluences below about 1×1013 cm−2 have little effect on the resonant tunneling diode but higher fluences decrease the peak current and increase the valley current. We find that proton-induced changes in the operating parameters are qualitatively similar to the effects of doping the wells. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124348
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  • 7
    Electronic Resource
    Electronic Resource
    Proton damage effects in YBa2Cu3O7/YBa2Cu2.79Co0.21O7/YBa2Cu3O7 Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 273-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of proton-induced defects on the properties of superconductor-normal-superconductor Josephson junctions with YBa2Cu2.79Co0.21O7 barriers have been investigated. The resistance (R) increases linearly and the critical current (Ic) decreases exponentially with fluence, respectively. Changes in Ic and R occur only at fluences which also reduce Tc. The results indicate that point defects probably have little influence on the uniformity of the Ic and R in junction arrays. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119517
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  • 8
    Electronic Resource
    Electronic Resource
    Radiation dose reduction by cysteine (1953)
    Philadelphia : Wiley-Blackwell
    Journal of Cellular and Comparative Physiology 42 (1953), S. 327-341 
    Details
    ISSN: 0095-9898
    Keywords: Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Medicine
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jcp.1030420302
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