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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 33 (1992), S. 2889-2897 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The physical channel with a cubic pole in the D5 affine Toda field theory is studied, showing the consistency with the S matrix result up to β4 order. It is found that the interplay between the Landau singularity and renormalization plays a very crucial role in the physical channels.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2387-2394 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, magnetic properties and magnetoresistance of Co/Cu multilayer films grown by sputtering on Si (100) wafers, with Co layer thicknesses between 1.9 nm and 2.0 nm and Cu layer thicknesses between 0.5 nm and 1.3 nm, have been studied. X-ray diffraction, transmission electron microscopy, and optical diffractogram analysis show layered structures and a columnar face-centred-cubic (111) crystallographic texture extending through several layers in the films. The magnetic domain structure was studied by Lorentz microscopy, and the domain structure and image contrast were found to depend strongly on the Cu layer thickness and magnetoresistance. Hysteresis curves explain the trends of magnetic domain contrast and magnetic coupling in the films. Annealed samples show a more regular domain structure, and lower saturating field and magnetoresistance than as-sputtered samples.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science, Ltd
    Aquaculture research 32 (2001), S. 0 
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A study was conducted to determine growth and feed utilization by haddock fed diets containing graded levels of protein (35, 40, 45 and 50%). Haddock fingerlings with an average weight of 24 g were hand-fed one of the four isoenergetic (≈16.6 MJ digestible energy kg−1) experimental diets to satiation, three times a day during the 9-week period. Filtered and UV-treated water (salinity, 30‰) was supplied to each circular tank (holding capacity: 320 L) at 4 L min−1 in a flow-through system. Increases in dietary protein improved weight gain, specific growth rate (SGR) and feed : gain ratio. The highest weight gain (percentage/initial weight) was observed in fish fed 50% protein, although there was no significant difference between groups fed 45% and 50% protein. A similar effect was observed in SGR of fish fed 50% protein, which was the highest among treatments. Although an increase in dietary protein resulted in a slight increase in feed intake, the lowest feed : gain ratio was obtained in fish fed the diet with the highest protein. Nitrogen intake increased from 1.48 to 2.33 g with the increase in dietary protein levels, which resulted in an improvement in whole-body nitrogen gain, although there were no significant differences in nitrogen retention and protein efficiency ratio among fish groups. The broken-line regression of weight gain against protein level yielded an estimated protein requirement of 49.9%.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetic properties of sputtered Co/Cu multilayer films with various layer thicknesses have been studied. X-ray diffractometry and high resolution electron microscopy show the films to be polycrystalline with a fcc structure and strong [111] texture in the growth direction. The magnetoresistance (MR) of the films depends critically on Cu layer thickness (tCu), with maximum values for films with tCu around 1 nm. Large differences in saturating field are seen for films with tCu and tCo differing by a nominal 0.1 nm. The magnetic domain structure, studied using Lorentz microscopy, shows strong dependence on tCu. High MR-value films showed evidence of antiphase magnetic domain boundaries. The high MR samples show antiferromagnetic coupling, with higher saturating fields than seen in the ferromagnetically coupled films.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 845-856 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The quantum R matrix for E7 and F4 are explicitly constructed for the defining representations 56 and 26 of E7 and F4, respectively. For these, Skein relations, link polynomials, and spectral parameter-dependent solutions of Yang–Baxter equation are obtained. The R matrix for the matrix elements related by the Weyl reflection has different values surprisingly.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 602-604 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the room temperature operation of 8–12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106 cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1071-1073 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2298-2300 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the operation of InSbBi infrared photoconductive detectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The fabricated photodetector showed a cutoff wavelength of 7.7 μm at 77 K. The responsivity of the InSbBi photodetector at 7 μm was about 3.2 V/W at 77 K. The corresponding Johnson-noise limited detectivity was 4.7×108 cm Hz1/2/W. The carrier lifetime was estimated to be about 86 ns from the voltage-dependent responsivity measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 215-217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2645-2647 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p+-InSb/π-InAs1−xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8–13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10−5 V cm2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz1/2/W. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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