Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2645-2647
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
p+-InSb/π-InAs1−xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8–13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10−5 V cm2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz1/2/W. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114323
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