ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The heteroepitaxial growth of 3C-SiC films on Si(100) substrates by the hot-meshchemical vapor deposition (HM-CVD) method using monomethylsilane as a source gas wasinvestigated. From the results of X-ray diffraction spectra, 3C-SiC crystal was epitaxially grown onSi substrates at substrate temperatures above 750°C. The SiC/Si interface was observed bycross-sectional scanning electron microscopy, and was confirmed to be void-free and smooth. Thedensity of hydrogen radicals supplied to the substrate surface during the growth was also estimatedmeasuring the optical absorbance change of tungsten phosphate glass plates. From the dependence ofthe growth rate on substrate temperature, the mechanism of SiC film growth by HM-CVD wasconsidered
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.11-12.265.pdf
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