ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The growth of 3C-SiC on thermal oxide layer of Si (SiO2) was investigated by hot-mesh(HM) chemical vapor deposition (CVD), which utilizes hot tungsten (W) wires of a mesh structure asa catalyzer. The SiC films were characterized by Fourier transform infrared spectroscopy (FT-IR),X-ray diffraction (XRD) and cross sectional transmission electron microscopy (TEM). From the XRDspectra of SiC films grown on SiO2 layer, (100) oriented SiC films were grown at the substratetemperatures of 750-800°C and the mesh temperature of 1600°C, while polycrystalline SiC filmswere grown at the substrate temperature above 900°C. From the data of FT-IR, TEM and the growthrate, the growth characteristics of SiC crystal by HMCVD were discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.11-12.257.pdf
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