ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemicalvapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layerwas formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial filmswere grown on the SiC layer by the reaction between NHx radicals generated on a tungstenhot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial filmsgrown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°Cto 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescencespectra of GaN films grown by the three step growth technique showed a strong near-band-edgeemission and a weak yellow luminescence
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.11-12.261.pdf
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