ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor-insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104900
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