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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1658-1660 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low-pressure chemical vapor deposition of diamond is described. A hot, thin-walled, refractory metal cathode is used to generate a high-current, low-voltage discharge. The substrates are located on the anode and immersed in the plasma emanating from the cathode tip. No auxiliary substrate heating is employed. Polycrystalline diamond particles and films are obtained on silicon (100) and molybdenum substrates at growth rates of 1–3 μm/h.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 451-452 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well-faceted diamond crystals and polycrystalline films have been produced by low-pressure, hot-filament-activated, chemical vapor deposition with the use of methane/ hydrogen gas. The effects on growth and morphology of varying filament and reactor tube materials as well as tube diameter are reported. Tungsten and tantalum filaments, operated under similar conditions, produced diamonds at essentially the same growth rates (typically ∼2 μm/h) and with similar crystallographic properties. Platinum filaments produced only graphitic deposits. Diamond growth and morphology appeared not to be influenced by changing the reactor wall material from fused quartz to Al2O3 or Pyrex or by varying the tube diameter.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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