Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1658-1660
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low-pressure chemical vapor deposition of diamond is described. A hot, thin-walled, refractory metal cathode is used to generate a high-current, low-voltage discharge. The substrates are located on the anode and immersed in the plasma emanating from the cathode tip. No auxiliary substrate heating is employed. Polycrystalline diamond particles and films are obtained on silicon (100) and molybdenum substrates at growth rates of 1–3 μm/h.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99049
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