ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing achlorosilane/propane chemistry in both single wafer and batch CVD systems. Variations ofthe chlorosilane flow under fixed conditions of gas composition, temperature and pressureresulted in growth rates between 4 to 20 μm/hr. Fixing the chlorosilane flow rate to achieve agrowth rate of approximately 4 μm/hr, the effects of temperature, pressure and gascomposition on background dopant incorporation, epitaxial layer uniformity and epitaxialdefect generation were investigated. Intentional n and p-type doping has been demonstratedover the carrier range 1×1018-1×1020/cm3. This paper presents the first reported of use ofchlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.175.pdf
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