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  • 1
    Electronic Resource
    Electronic Resource
    Residual images in charged-coupled device detectors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 2028-2032 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present results of a systematic study of persistent, or residual, images that occur in charged-coupled device (CCD) detectors. A phenomenological model for these residual images, also known as "ghosting," is introduced. This model relates the excess dark current in a CCD after exposure to the number of filled impurity sites which is tested for various temperatures and exposure times. We experimentally derive values for the cross section, density, and characteristic energy of the impurity sites responsible for the residual images. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1470234
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  • 2
    Electronic Resource
    Electronic Resource
    Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 374-381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using molecular beam epitaxy, we have successfully grown device quality GaAs/AlGaAs on (100)-oriented Ge and Si substrates. Modulation doped field effect transistors have been fabricated from these layers which exhibit room-temperature transconductances as high as 160 and 170 mS/mm for layers on Ge and Si, respectively, and showed no looping in either case. At 77 K, these values rose to 345 and 275 mS/mm for Ge and Si, respectively. Analysis by transmission electron microscopy of layers grown on Ge showed that the antiphase disorder was contained within the 250-A(ring)-thick initial layer which was grown at a 0.1-μ/h growth rate at a substrate temperature of 500 °C. For both the layers grown on Si and Ge specular surface morphologies were obtained. The photoluminescence of GaAs/AlGaAs quantum wells grown on Si and Ge was similar in intensity to the same quantum well structures grown on GaAs. In quantum wells grown on Ge, the luminescence was dominated by a donor-acceptor recombination at 1.479 eV, which appears to be Ge0Ga -Ge0As. These results show that high-quality GaAs/AlGaAs is obtainable on nonpolar substrates, which has important implications for the monolithic integration of III-V's with Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335687
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    Paper (German National Licenses)
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