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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process has been developed that enables the rapid chemical vapor deposition of superconducting YBa2Cu3Ox. In this process a finely ground mixture of Y(tmhd)3, Ba(tmhd)2, and Cu(tmhd)2 (tmhd=2,2,6,6-tetramethyl-3,5-heptanedionate) is slowly fed, and pneumatically transported, directly into the chemical vapor deposition furnace. Because vaporizers are not used, the number of process parameters that must be controlled is greatly reduced. Deposition rates are at least an order of magnitude greater than those achieved by reagent sublimation. Films have been characterized by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and resistance versus temperature measurements. Films produced on planar MgO substrates have Tc values that are significantly higher than previously reported for MgO.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The deposition of boron carbide (B13C2) onto graphite substrates was accomplished by using a hot-wall chemical vapor deposition (CVD) reactor at a pressure of 10.1 kPa in the temperature range of 1000°–1400°C. A modified impinging-jet geometry was used to simplify the mass-transfer analysis. Coatings were characterized using X-ray diffractometry (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The surface morphology was composed of well-defined facets, the size of which was dependent on the growth rate and deposition time, as would be expected from a competitive growth mechanism. TEM micrographs of the coating showed long, columnar grains that emanated from a narrow nucleation zone. The growth rate could be adequately described by a first-order kinetic expression, with respect to the bulk gas phase boron chloride (BCl3) concentration. The activation energy of the kinetic expression was estimated to be 93.1 kJ/mol. It was proposed that the deposition was limited by the adsorption of (BCl3) onto the substrate surface.
    Type of Medium: Electronic Resource
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