ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrierdiodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. Weinvestigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for(0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001).The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1),respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakagecurrent, an excellent ideality factor, and no excess current, encouraging the enlargement of the activearea in the SBD
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.927.pdf
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