ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigated the location of the nuclei of Shockley-type stacking faults (SSFs) in the4H-SiC pin diodes, using electroluminescence (EL) imaging. The nuclei of SSFs were identified asthree types, located (i) on the mesa edge, (ii) in the surface region, and (iii) inside the epilayer. Wecompared the frequency of the nuclei according to these three locations for the (0001) and (000-1) pindiodes. The number of SSFs originated from the nuclei inside the epilayer in the (000-1) pin diodeswas much less (〈4 cm-2) than that in the (0001) pin diodes. However, the numbers of SSF nuclei (0.3~ 0.8 per device) located on the mesa wall and the surface region in the (000-1) pin diodes werecomparable to the (0001) pin diodes. We also investigated the process responsible for generating theSSF nuclei
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.251.pdf
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