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  • 1
    Electronic Resource
    Electronic Resource
    Tensile strength of synthetic chemical-vapor-deposited diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5177-5179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure burst tests gave measured tensile strengths between 230 and 410 MPa for a total of six chemical-vapor-deposited (CVD) diamond disks in both transparent "white'' and opaque "black'' forms obtained from three different sources. The disks were nominally 0.635 cm in diameter and 254 μm thick. These strengths are explained by a theoretical model using a Young's modulus of 1.05×106 MPa and a fracture surface energy of 5.3 J/m2, appropriate for natural diamond, and with critical crack lengths between 33 and 105 μm. The latter lengths can fit, either on or inside, the tapered columnar crystal grains that grow vertically in synthetic CVD diamond films. The model is consistent with the observed inverse dependence of measured tensile strength on film thickness and with tensile strengths between 180 and 5190 MPa reported by other workers for synthetic CVD diamond. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359752
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  • 2
    Electronic Resource
    Electronic Resource
    The hyperfine interactions in CsF (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8396-8399 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The molecular beam electric resonance technique has been used to examine the hyperfine spectrum of CsF to determine the nuclear quadrupole interaction of the cesium nucleus. A total of 95 transitions in vibrational states v=0−5 and rotational states J=1−8 have been included in a fit to determine the cesium nuclear quadrupole and spin–rotation interactions, the fluorine spin–rotation interaction, and the tensor and scalar parts of the spin–spin interaction. Vibration and rotation dependencies of these constants have been determined, allowing correction for zero point vibration effects. This experimental Cs nuclear quadrupole coupling constant when combined with the electric field gradient calculated using a relativistic coupled cluster method yields a nuclear quadrupole moment of the Cs nucleus equal to eQ=−3.43098 mbarn. The vibrational dependence of the coupling constant is smaller than the theoretical estimate. The coupling constants we have determined are the following: eQCsqCs=1245.598(10)−14.322(25)(v+1/2)+0.080(14)(v+1/2)2+0.0040(22)(v+1/2)3−0.00209(59)J(J+1)+0.00048(40)(v+1/2)J(J+1), cCs=0.66177(14)−0.01509(28)(v+1/2)+0.000550(94)(v+1/2)2, cF=15.08163(84)−0.1744(14)(v+1/2)+0.00234(41)(v+1/2)2−0.000093(13)J(J+1), c3=0.92713(53)−0.00917(93)(v+1/2)+0.00097(29)(v+1/2)2, c4=0.62745(30)−0.00903(22)(v+1/2). All values are in kHz units, with one standard deviation uncertainty estimates in the last two digits shown in ( ). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480213
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for a nuclear hexadecapole interaction in the hyperfine spectrum of LiI (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 2431-2436 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The molecular beam electric resonance technique has been used to examine the hyperfine spectrum of 7LiI to determine the nuclear hexadecapole interaction of the iodine nucleus. The nuclear magnetic octupole interaction was also considered but found to be marginally significant. A total of 172 transitions in vibrational states 0-3 and rotational states 1-6 have been included in a fit to determine the iodine nuclear quadrupole, spin-rotation, and hexadecapole interactions, the lithium quadrupole and spin-rotation interactions, and the tensor and scalar parts of the spin-spin interaction. Vibration and rotation dependencies of these constants have been determined. The results include: eHh=−0.0151(30), eQIqI=−194351.212(17)−8279.521(46)(v+1/2)+100.616(34)(v+1/2)2−0.3949(73)(v+1/2)3−6.41977(50)J(J+1)+0.10593(33)(v+1/2)J(J+1),eQLiqLi=172.613(52)−3.26(14)(v+1/2)+0.00145(87)J(J+1),cI=6.80260(32)+0.00303(49)(v+1/2)−0.000118(13)J(J+1), cLi=0.75872(72)−0.0088(11)(v+1/2), c3=0.62834(68)−0.0050(11)(v+1/2), c4=0.06223(36)+0.00041(26)(v+1/2), and eΩIωI′=0.000112(73), all in kHz with one standard deviation uncertainties for the last 2 digits in ( ). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477972
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  • 4
    Electronic Resource
    Electronic Resource
    Pyroelectric detection with smectic liquid crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2778-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential of ferroelectric liquid crystals for application as pyroelectric infrared detectors is examined. The liquid crystals studied belong to a family of biphenyl and phenylbenzoate esters. It is found that even within this first liquid-crystal family examined, the materials figure of merit compares well with ferroelectric solid materials commonly used for infrared detection and imaging. Because they permit very simple and flexible device design, liquid crystals are attractive candidates for these applications. However, for low-frequency applications, attention must be paid to the reduction of thermal loading by the cell walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337111
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  • 5
    Electronic Resource
    Electronic Resource
    Chromatic aberration of three-cylinder electrostatic lenses (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3339-3345 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Accurate calculations of the axial chromatic aberration coefficients of geometrically symmetric three-cylinder tripotential electrostatic lenses are presented for two different center electrode lengths. This is an extension of the first-order properties and the third-order spherical aberration coefficients published by Harting and Read.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142550
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4700-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently several research groups, including ours, have reported on the deposition of extremely high quality single crystal GaN layers over sapphire substrates. One of the keys to obtaining the high quality was the use of a thin AlN or GaN buffer layer between the sapphire substrate and the grown film. In this communication, we discuss the crystallinity and the influence of the buffer layer in controlling the crystalline, optical, and the electrical properties of the GaN depositions. We also compare the use of GaN and AlN as the buffer layer material. Our results indicate that the buffer layer thickness and the total film thickness are the key factors controlling the electrical, optical, and crystalline properties of the GaN depositions over sapphire substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354069
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  • 7
    Electronic Resource
    Electronic Resource
    Deposition and surface characterization of high quality single crystal GaN layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3108-3110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, using low pressure metalorganic chemical vapor deposition we grew extremely high quality single crystal GaN films over basal plane sapphire substrates. Optimization of the buffer layers and the total film thickness played a key role in determining the electrical, optical, crystalline and surface qualities. In this communication we present the surface characterization results for these high quality GaN layers. Reflection high energy electron diffraction, low energy electron diffraction (LEED), and electron energy loss spectroscopy data are presented for clean GaN surfaces. The cleaning procedure was developed using Auger electron spectroscopy analysis. These electron diffraction data indicate the grown surface to be excellent single crystal GaN with a wurtzite structure. To the best of our knowledge ours is the first reported LEED data for single crystal GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352999
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  • 8
    Electronic Resource
    Electronic Resource
    Spontaneous current oscillations in optically pumped semi-insulating InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4111-4115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current oscillations arising from voltage-controlled negative differential resistivity are observed in optically pumped semi-insulating InP at low temperature. The presence of high-field domains sweeping through the sample are detected using photorefractive four-wave mixing. Direct evidence of the role of defects in these current oscillations is presented using deep-level photodiffractive spectroscopy. A deep hole trap with an energy Ev +85 meV is observed. The current oscillations occur only when this defect level is partially occupied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346251
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 526-527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low-pressure metalorganic chemical vapor deposition of high quality single-crystal GaN layers over basal plane sapphire substrates. Optimization of growth conditions resulted in material with carrier densities of 1017 /cm3 at room temperature and corresponding mobilities around 350 cm2 /V s. The photoluminescence linewidths improved from 160 meV [full width at half maximum (FWHM)] to 25 meV (FWHM). With improved material quality we were able to observe the polar optical mode and the ionized impurity scattering regimes in the mobility versus temperature data. Good quality Schottky barriers were formed on the as-grown material using a tungsten probe and an alloyed indium contact. Our observations indicate a direct correlation between electrical and optical characteristics of good material and strongly question nitrogen vacancies as the sole explanation for the high carrier densities observed in poor quality GaN growths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104575
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  • 10
    Electronic Resource
    Electronic Resource
    Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1515-1517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of near-UV vertical-cavity stimulated emission from a photopumped GaN epilayer at room temperature. The epilayer was deposited over AIN-coated basal plane sapphire substrate using low-pressure metalorganic chemical vapor deposition. Epitaxy quality of a 1.5-μm-thick GaN layer was high enough to achieve stimulated emission at room temperature. The observed near-UV optical emission power was a nonlinear function of the pump power density. At threshold power density, we also observed line narrowing and a shift of the peak UV emission towards longer wavelengths. Data comparing the UV emission for the vertical-cavity and the edge emission geometry are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105163
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