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  • 1
    Electronic Resource
    Electronic Resource
    Electron-hole interaction and high-field transport of photoexcited electrons in GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5330-5336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a theoretical ensemble Monte Carlo method to study the response of carriers photoexcited by a 1.55-eV laser pulse to applied electric fields (less than 5 kV/cm) for excited carrier densities between 1017 cm−3 and 1018 cm−3. It is found that the electron-hole interaction reduces the fraction of electrons that transfer to the upper valleys and reduces the velocity of the electrons. These effects are more significant at low electric fields and higher excitation levels. The energy of the holes rises initially due to the energy transfer from the hot electrons through the electron-hole interaction. This is also reflected in a higher velocity for the holes during the first picosecond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338269
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast energy loss of electrons in p-GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 264-266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the ultrafast energy relaxation of photoexcited minority electrons in highly doped p-GaAs by means of femtosecond time resolved luminescence (Δt〈90 fs). Our experiments allow the first observation of the extremely fast cooling of minority electrons within the Γ-valley. The electron mean energy decreases within 150 fs from 150 meV down to less than 50 meV. The total energy loss rate reaches values higher than 10−7 W per electron, representing the highest energy loss rates of electrons observed to date in monocrystalline semiconductors. Ensemble Monte Carlo simulations show that the electron-hole scattering is responsible for these high energy loss rates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114777
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  • 3
    Electronic Resource
    Electronic Resource
    Minority electron transport across p+ doped submicron layers of GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 308-313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of transient transport of minority electrons injected into p+ doped submicron layers of GaAs have been investigated using ensemble Monte Carlo method. It is found that the transit times of electrons across these layers are longer or shorter depending on the electric field strength, injection energy, and the width of the layers. The transit time across a 0.4 μm p+ doped GaAs layer increased from 1.0 to 2.0 ps at 10 kV/cm, while it decreased from about 3.0 to 2.0 ps at 50 kV/cm when the inelastic scattering of the minority electrons by the hole plasma is taken into account. Also, the calculated transit times across a 0.4 μm wide layer do not show any significant dependence on the injection energy when electron–hole (e–h) interaction is accounted for. The average drift velocity across the 0.4 μm layer doped p = 2 × 1018 cm−3 is 2 × 107 cm/s which is more than twice the saturation velocity in GaAs. This is attributed to the role of the e–h interaction which leads to reducing both the mobility of electrons and their transfer rates to the upper valleys in GaAs, and the rapid thermalization of the energy and momentum distributions of the electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350707
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  • 4
    Electronic Resource
    Electronic Resource
    Monte Carlo study of hole transport in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3219-3223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady state and transient drift velocity of holes in silicon have been investigated using Monte Carlo techniques. The valence band is modeled by warped nonparabolic heavy and light hole bands, and a spherical spin-orbit band. The nonparabolicity of the heavy and light hole bands is included using piecewise continuous functions. The calculated velocities are in better agreement with experimental steady state drift velocity values compared to previous Monte Carlo calculations using only a heavy hole band. Transient calculations show the magnitude of the velocity overshoot for holes is smaller than electrons in silicon but is significantly higher than the steady state drift velocity when high fields are applied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354595
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon selective nondoped hydrogen atmosphere flame ionization detector for gas chromatography (1979)
    s.l. : American Chemical Society
    Analytical chemistry 51 (1979), S. 1286-1292 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50044a039
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  • 6
    Electronic Resource
    Electronic Resource
    Electron velocity overshoot and valley repopulation effects in diamond (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1902-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ensemble Monte Carlo procedures, electron velocity overshoot and transient valley repopulation in diamond have been investigated as a function of field strength and orientation. It is found that the response of electrons to the sudden application of a 50 kV/cm electric field along 〈100〉 results in a velocity transient with a maximum of 1.9×107 cm/s after 200 fs and a steady state value of 1.30×107 cm/s. For a field along 〈110〉, the corresponding maximum and steady state values are 2.0×107 and 1.4×107 cm/s, respectively. The calculated temporal and spatial duration of velocity overshoot in diamond is longer than that of silicon but shorter than that of gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101236
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  • 7
    Electronic Resource
    Electronic Resource
    Monte Carlo investigation of minority-electron transport in In0.53Ga0.47As (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1812-1814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport of minority electrons in p-type In0.53Ga0.47As has been investigated for 1017 and 5×1017 cm−3 doping levels. Using Monte Carlo methods and including inelastic electron-hole (e-h) scattering, it is found that the mean electron velocity for fields below 4 kV/cm is smaller when e-h scattering is included than when it is absent. The mean velocities above 4 kV/cm are higher when e-h scattering is included and reach a peak at 5 kV/cm. The study reveals that the principal contribution of the e-h scattering is a more efficient channel of electron energy relaxation, with the consequence of a significantly reduced transfer of carriers to the upper valleys for fields below 6 kV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98531
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusivity, density, viscosity, and refractive index of nickel ammonium sulfate aqueous solutions (1967)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 12 (1967), S. 516-517 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je60035a013
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  • 9
    Electronic Resource
    Electronic Resource
    Monte Carlo investigation of minority electron transport in silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 187-189 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport of minority electrons in silicon has been investigated using an ensemble Monte Carlo approach at room temperature with electron-hole scattering rates which take into account the ellipsoidal nature of the conduction band valleys. Mobility calculations showed quantitative agreement with experimental values at an acceptor concentration of 4.5×1016 cm−3 while qualitative agreement with the electron-hole drag effect was observed at 3.8×1018 cm−3. Transient calculations showed the electron-hole interactions decrease electron energy, reduce steady-state velocity, and decrease the transfer rate of electrons to the cold valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109334
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  • 10
    Electronic Resource
    Electronic Resource
    Negative response mode of a silicon-selective hydrogen-atmosphere flame ionization detector for gas chromatography (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 1425-1428 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00245a033
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