ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC MOSFET devices with low temperature dry thermal oxidation (1050 ºC 1 h) andTEOS plasma enhanced CVD deposited oxides on 4H-SiC substrates have been analysed in thispaper. MOSFET transistors have been fabricated on the 4H-SiC (0001) Si face. The mobilityimprovement (up to 38-45 cm2/Vs) is remarkable compared with standard oxidation (〈10 cm2/Vs).In addition, very high (but controversial) field-effect mobilities of around 216 cm2/Vs have alsobeen extracted for MOSFETs fabricated on the (11-20) face. Taking into account the thresholdvoltage and the sub-threshold slope (S), we can see that we have three different ways to increase themobility. First, by using (11-20) face material as already proposed. Second, by reducing theinterface trap density as done with the low temperature thermal oxidation plus deposited oxide. Andthird, under the most favorable conditions with adequate TEOS deposition conditions. In this lastcase, the mobility improvement seems to be related with the gate current leakage more than (ortogether with) an interface traps reduction of the gate insulator
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1047.pdf
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