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  • 1
    Electronic Resource
    Electronic Resource
    Oligodeoxynucleotide Fragmentation in MALDI/TOF Mass Spectrometry Using 355-nm Radiation (1995)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 117 (1995), S. 6048-6056 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00127a018
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1159-1162 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We theoretically and experimentally compare the performance of a new JBSrectifier structure, the Buried Channel JBS (BC-JBS) rectifier, with that of the LateralChannel JBS (LC-JBS) rectifier with 1.5kV blocking capability in 4H-SiC. The BC-JBSrectifier employs buried p-type regions to create a vertical JFET region to reduce the surfaceelectric field at Schottky contact during reverse blocking while the LC-JBS rectifier adds alateral channel together with the vertical JFET region to protect the surface Schottky interfaceduring high-voltage blocking conditions. The LC-JBS rectifier offers low reverse leakagecurrent while the BC-JBS rectifier demonstrates lower specific on-resistance. The optimizedLC-JBS rectifiers show low forward drop (〈1.8V) with PiN-like reverse characteristics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1159.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1367-1370 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated usingAlN capped anneal. The surface damage during the high temperature activation anneal issignificantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage atroom temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achievenear ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted andcompared with previously reported results
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1367.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1401-1404 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: For SiC devices capable of blocking very high voltages (〉4kV), it becomesimperative to use bipolar devices because of unacceptably large on-state losses of unipolardevices. The IGBT offers the potential for high current density operation and ease of turn offusing a MOS gate structure. In this work, 15kV 4H-SiC n-channel UMOS PT (PunchThrough) IGBTs with injection enhancement effect near the top emitter and transparent pemitterstructure at the collector have been demonstrated to have a forward drop approachingthat of a PiN junction rectifier. With proper design, a PiN-like carrier distribution in the driftregion can be achieved, which allows a better trade-off between collector-emitter saturationvoltage (VCE(sat)) and turn-off loss (Eoff) than conventional SiC UMOS IGBTs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1401.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    A Study on Titanium Alloys Deep-Hole Drilling Technique (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 532-533 (Dec. 2006), p. 945-948 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Focusing on the difficult-to-cut characteristic of titanium alloy, this paper selects severalcemented carbide tool materials in the tests of machining the titanium alloy workpieces. Differentsets of geometrical parameters of the drilling bits are grouped, chosen and optimized, and thendeep-hole drilling tests are carried out. The suitable cutter materials and the optimum geometricalparameters of the cutter for drilling deep holes in titanium alloy have been determined through theanalysis of tested results
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.532-533.945.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 697-700 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this work, we have investigated triple and innovative multiple stacked contacts onto ptypeSiC in order to evaluate whether or not there is any improvement in morphology or specificcontact resistivity. The stacked metal contacts are based on Al, Ti and Ni with the specific contactresistivity measured at a low value of 5.02×10-6'cm2 for an Al(100 nm)/Ti(100 nm)/Al(10 nm)(where a “/” indicates the deposition sequence) triple stacked metal contact. XRD microstructuralanalysis and SEM measurements have been carried out and it has been discovered that the contacts,which formed the compound Ti3SiC2 at the metal/SiC interface, more readily display low-resistanceohmic characteristics after a post deposition anneal. Although the same amount of Ti (100 nm intotal) has been deposited closer to the metal/SiC interface, none of the multiple stacked structuresdisplayed ohmic behaviour after a post deposition anneal
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.697.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure of Brazing Joint of Silicon Nitride (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 4048-4052 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Si3N4 and 40CrMo steel was joined using Ag-Cu-Ti-Pd brazing filler. Microstructure ofthe joint and bonding interface was studied by SEM and EDS, and the phase structure was analyzedby XRD. The results indicate that reaction layers at ceramic/ filler alloy and filler alloy/steelinterfaces are formed. There is a reaction layer containing TiN and Ti5Si3 between ceramic and filleralloy, while the reaction layer between filler alloy and steel is composed of Fe-Ti compound. Themiddle part of the joint is an eutectic structure composed of Ag-riched and Cu-riched solid solutions.With the increase of the brazing temperature, the thickness of the joint seem decrease, the thickness ofthe reaction layer between Si3N4 and filler alloy increases and then decreases, and the thickness ofthe reaction layer between filler alloy and steel increases
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.4048.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Application of a multichannel detection system to the high-resolution fast electron energy loss spectrometer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3357-3361 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A microchannel-plate based resistive-anode position sensitive detection system is applied to a high-resolution fast electron energy loss spectrometer. The biasing voltage divider network for the detector is investigated. The measurement efficiency is increased by about 20 times, and to some extent, the energy resolution is also improved. The static mode and the scanning mode of the spectrometer are discussed in detail. In the scanning mode, a spectrum with higher energy resolution can be obtained through a coarse scanning. As a testing experiment, the optical oscillator strength spectrum for the Rydberg series of helium is measured and the results are compared. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382636
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Image reconstruction of three dimensional temperature field from projections in optical tomography (1995)
    Springer
    Heat and mass transfer 30 (1995), S. 331-339 
    Details
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung Die holographische Interferometrie ist in der Wärmetechnik als sehr geeignete Meßmethode zur Ermittlung von Temperaturfeldern bekannt. In dieser Arbeit werden einige praktische Algorithmen zur Bildrekonstruktion und damit Temperaturfeldermittlung aus Projektionsabbildungen angegeben. Diese enthalten ein Verfahren, das die aus der Radon-Transformation resultierende Integralgleichung mit Hilfe einer Gittermethode unmittelbar zu lösen gestattet, wobei die Radon-Umkehrtransformation numerisch über die zweidimensionale Fourier-Transformation bewältigt wird. Einige Beispiele belegen die praktische Anwendbarkeit der oben genannten Methoden. Mit Hilfe des holographischen Interferometersystems wird die Strömung erwärmter Luft über einer Brennkammer mit rechteckiger Öffnung untersucht und die Temperaturverteilung in zwei Schritten des Strömungsfeldes vermittels der beschriebenen Methode rekonstruiert.
    Notes: Abstract It is well known that determination of temperature fields by holographic interferometry is a successful method in the measurement of thermophysics. In this paper, some practical algorithms for image reconstruction from projections are presented to produce the temperature field. Algorithms being developed include that the Radon transform integral equation is directly solved by a grid method, and that the Radon inversion formula is numerically evaluated by two-dimensional Fourier transform technique. Some examples are given to verify the validity of the above methods in practice. A heat air flow above conbustor with a rectangular hole is investigated by holographic interferometric system, and temperature distributions of two sections in the air flow field have been reconstructed by this methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01463924
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Image reconstruction of three dimensional temperature field from projections in optical tomography (1995)
    Springer
    Heat and mass transfer 30 (1995), S. 331-339 
    Details
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung Die holographische Interferometrie ist in der Wärmetechnik als sehr geeignete Meßmethode zur Ermittlung von Temperaturfeldern bekannt. In dieser Arbeit werden einige praktische Algorithmen zur Bildrekonstruktion und damit Temperaturfeldermittlung aus Projektionsabbildungen angegeben. Diese enthalten ein Verfahren, das die aus der Radon-Transformation resultierende Integralgleichung mit Hilfe einer Gittermethode unmittelbar zu lösen gestattet, wobei die Radon-Umkehrtransformation numerisch über die zweidimensionale Fourier-Transformation bewältigt wird. Einige Beispiele belegen die praktische Anwendbarkeit der oben genannten Methoden. Mit Hilfe des holographischen Interferometersystems wird die Strömung erwärmter Luft über einer Brennkammer mit rechteckiger Öffnung untersucht und die Temperaturverteilung in zwei Schritten des Strömungsfeldes vermittels der beschriebenen Methode rekonstruiert.
    Notes: Abstract It is well known that determination of temperature fields by holographic interferometry is a successful method in the measurement of thermophysics. In this paper, some practical algorithms for image reconstruction from projections are presented to produce the temperature field. Algorithms being developed include that the Radon transform integral equation is directly solved by a grid method, and that the Radon inversion formula is numerically evaluated by two-dimensional Fourier transform technique. Some examples are given to verify the validity of the above methods in practice. A heat air flow above conbustor with a rectangular hole is investigated by holographic interferometric system, and temperature distributions of two sections in the air flow field have been reconstructed by this methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01463924
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    Paper (German National Licenses)
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