ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC samples implanted at 600°C with 1018, 1019, or 1020 cm-3 of Al to a depth of ~ 0.3μm and annealed with a (BN)AlN cap at temperatures ranging from 1300 – 1700°C were studied.Some of the samples have been co-implanted with C or Si. They are examined using Hall, sheetresistivity, CL, EPR, RBS, and TEM measurements. In all instances the sheet resistance is largerthan a comparably doped epitaxial layer, with the difference being larger for samples doped tohigher levels. The results suggest that not all of the damage can be annealed out, as stable defectsappear to form, and a greater number or more complex defects form at the higher concentrations.Further, the defects affect the properties of the Al as no EPR peak is detected for implanted Al, andthe implanted Al reduces the AlSi peak intensity in bulk SiC. CL measurements show that there is apeak near 2.9941 eV that disappears only at the highest annealing temperature suggesting it isassociated with a complex defect. The DI peaks persist at all annealing temperatures, and arepossibly associated with a Si terminated partial dislocation. TEM analyses indicate that the defectsare stacking faults and/or dislocations, and that these faulted regions can grow during annealing.This is confirmed by RBS measurements
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.831.pdf
Permalink