ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
While nickel ohmic contacts to n-type silicon carbide have good electrical properties, thephysical contact, and therefore the reliability, can be poor. An approach is described for using thegood electrical properties of Ni ohmic contacts while using another metal for its desiredmechanical, thermal and/or chemical properties. In the present work, once the Ni contacts havebeen annealed forming nickel silicides and achieving low contact resistance, they are etched off.Removing the primary Ni contacts also eliminates the poor morphology, voids, and at least some ofthe excess carbon produced by the Ni/SiC reaction. The Ni contacts are then replaced by a secondcontact metal. This second metal displays low contact resistance as-deposited, indicating that thecritical feature responsible for the ohmic contact has not been removed by the primary contact etch.Not only does this approach provide more flexibility for optimizing the contact for a givenapplication, it also provides some insight into the ohmic contact formation mechanism
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.859.pdf
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