ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA cm−2. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm s−1 was obtained in a 1:1:50 HF:HCl:H2O electrolyte.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00695513
Permalink