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  • 1
    Electronic Resource
    Electronic Resource
    Electroluminescence from Si/Si oxynitride superlattices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3408-3410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Si/Si oxynitride superlattices, with three periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si oxynitride layers and Si layers in the superlattices are 2.0 and 1.4 nm, respectively. Visible electroluminescence (EL) from a semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure has been observed. Each EL spectrum of the structure has a dominant peak around 640 nm, a weaker peak around 520 nm, and a shoulder around 820 nm. By comparing the EL from the semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure with that from a semitransparent Au film/Si oxynitride film/p-Si structure, we found that the EL efficiency of the former structure is about 2–4 times of that of the latter one. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121648
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  • 2
    Electronic Resource
    Electronic Resource
    Electroluminescence from semitransparent Au film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si structure under reverse bias (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1416-1418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer SiO2/nanometer Si/nanometer SiO2 double-barrier (DB) structures, with Si layers having eleven different thicknesses from 2 to 4 nm, were deposited on n+–Si substrates using the magnetron sputtering technique. Strong electroluminescence (EL) from semitransparent Au film/DB/n+–Si structure was observed under reverse bias in a range of about 5–7 V. It is found that every EL spectrum of the structure can be decomposed into two Gaussian bands with peaks at around 1.85 and 2.25 eV, and their intensities and current swing synchronously with increasing nanometer Si layer thickness; the periodic length of swing is consistent with half of the de Broglie wavelength of the carriers. A comparison was carried out between EL from the Au/DB/n+–Si structure under reverse bias and that from the Au/DB/p–Si structure under forward bias reported previously. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290597
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    Paper (German National Licenses)
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