Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Two-band structure in photoluminescence spectra from porous silicon and its dependence on excitation wavelength (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 478-480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically measured the room-temperature photoluminescence spectra with a two-band structure from porous silicon (PS), as a function of excitation wavelengths in a wavelength range from 260 to 460 nm. Each spectrum can be fitted by two Gaussian functions centered at about 610 and 700 nm, the intensities of the two bands change with excitation wavelength and the intensity maxima occur when the excitation wavelength is about 340 and 400 nm, respectively. When the excitation wavelength exceeds 420 nm, the band at 610 nm is very weak. The above phenomena can be accounted for in the quantum confinement/luminescence centers model [G. G. Qin and Y. Q. Jia, Solid State Commun. 86, 559 (1993)], where it is supposed that there are two kinds of luminescence centers in SiOx layers covering the nanoscale silicon units in PS. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360629
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization of stain etched porous Si with photoluminescence, electron paramagnetic resonance, and infrared absorption spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7615-7617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type crystal Si substrates, and are characterized by photoluminescence (PL), electron paramagnetic resonance (EPR), and infrared absorption (IR) spectroscopy. The PL spectra under 488 nm laser excitation exhibit a strong peak at 680–720 nm for various samples of different substrate parameters and remain stable upon aging in air or γ irradiation; as-etched (∼20 min in air before measurement) and aged (for up to six months) samples show no detectable EPR signal but the γ-irradiated samples show an isotropic g=2.006 signal of peak-to-peak linewidth of 1.1 mT supporting an amorphous Si structure; the IR spectra show both hydrogen and oxygen related IR modes in the as-etched samples and the former decreases with aging time in air while the latter increases. Comparing our results with those of anodically etched PS samples we conclude that: (1) the PL peak position of the stain PS seems to be unique and stable as compared with that of the anodic PS varying in 620–830 nm; (2) the isotropic EPR signal of the stain PS reflects no crystallinity, in contrast with the anisotropic signal of the anodic PS; and (3) obvious oxidation in the as-etched stain PS is also in contrast with the nonobservation of oxygen-related IR modes in the as-etched anodic PS. We discuss the results in terms of structural properties and PL mechanism of PS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354940
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2006-2009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si diodes at room temperature. The Si-rich silicon oxide films, with thickness of about 40 A(ring), were grown using the magnetron sputtering technique. At forward bias of 4 V, EL spectra with peak energy of 1.9 eV and full width at half maximum of 0.5 eV can be observed from diodes with such extra thin Si-rich oxide films having not been annealed. EL peak energy shows a small red shift under low forward bias but does not shift again when increasing the bias further. Annealing at 800 °C, EL spectra widen and show several shoulders at about 1.5, 2.2, and 2.4 eV, and the EL peak energy shows blue shift with increasing forward bias. These results are shown to be consistent with light emission at several types of luminescence centers in the Si-rich silicon oxide films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360175
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electroluminescence from semitransparent Au film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si structure under reverse bias (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1416-1418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer SiO2/nanometer Si/nanometer SiO2 double-barrier (DB) structures, with Si layers having eleven different thicknesses from 2 to 4 nm, were deposited on n+–Si substrates using the magnetron sputtering technique. Strong electroluminescence (EL) from semitransparent Au film/DB/n+–Si structure was observed under reverse bias in a range of about 5–7 V. It is found that every EL spectrum of the structure can be decomposed into two Gaussian bands with peaks at around 1.85 and 2.25 eV, and their intensities and current swing synchronously with increasing nanometer Si layer thickness; the periodic length of swing is consistent with half of the de Broglie wavelength of the carriers. A comparison was carried out between EL from the Au/DB/n+–Si structure under reverse bias and that from the Au/DB/p–Si structure under forward bias reported previously. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290597
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature 1.54-μm electroluminescence from the Au/nanometer (SiO2:Er/Si/SiO2:Er)/n+-Si structure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2496-2498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (SiO2:Er/Si/SiO2:Er) nanometer sandwich structure, in which the thickness of the Si layer between the two SiO2:Er barriers was varied from 1.0 to 4.0 nm with an interval of 0.2 nm, was deposited on both n+-Si and p-Si substrates using the magnetron sputtering technique. Electroluminescence (EL) from the Au/(SiO2:Er/Si/SiO2:Er) nanometer sandwich /n+-Si diodes under reverse biases has been observed. The EL spectrum of each diode can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 μm), 0.806 eV (1.54 μm), and 0.860 eV (1.44 μm), and full widths at half maximum of 0.052 eV, 0.045 eV, and 0.055 eV, respectively. The marked effect of the nanometer Si layer with suitable thickness on enhancing the EL from the Er3+ in the SiO2 layers has been demonstrated. Among the diodes with Si layers having various thicknesses, the intensities of the 1.64-, 1.54-, and 1.44-μm bands of the diode with a 1.6-nm Si layer attain maxima which are 22, 8, and 7 times larger than those of the control diode without any Si layer, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467623
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Two local vibrational modes related to hydrogen in GaN (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5745-5747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed two absorption bands located at around 1730 and 2960 cm−1 in the infrared (IR) absorption spectra from undoped GaN samples which are grown using low pressure metalorganic vapor phase epitaxy and irradiated by gamma ray and then exposed to a radio frequency hydrogen plasma. Proton implantation followed by gamma-ray irradiation of the GaN samples can also activate the IR band at around 1730 cm−1. Based on the experimental results, we tentatively ascribe the 1730 cm−1 band to the local vibrational modes of Ga–H complexes in the vicinity of N vacancies and the 2960 cm−1 band to those of either N–H complexes in the vicinity of Ga vacancies or C–H complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366438
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2 layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3282-3284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111310
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Gamma-rays irradiation: An effective method for improving light emission stability of porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous Si irradiated by gamma rays shows that the observed signals come from an intrinsic defect, a Si dangling bond, at the interface of Si/SiOx in porous Si. The photoluminescence measurements show that the gamma irradiation not only increases the intensity of the photoluminescence but also greatly improves its stability. The spectra of the Fourier transform infrared absorption show that the gamma irradiation is an effective method for accelerating oxidation of porous Si. All experimental results can be explained by the increase of the oxidation layer thickness which decreases the nonradiative recombination probability of electron-hole pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110677
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous silicon layers: Evidence for crystalline Si phase (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1408-1410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In photoluminescent porous Si layers is observed a dominant intrinsic EPR signal of trigonal symmetry with g(parallel)=2.0023±0.0003 and g⊥=2.0086±0.0003 as principal g values. This EPR signal can be identified with Si dangling bonds by its symmetry and characteristic g values. The rotation pattern of the EPR signal indicates that the axial directions of the dangling bonds are distributed in all the four 〈111〉 crystal axes of the original silicon lattice. These results can be exclusively explained by the existence of the crystalline Si phase with retention of the original crystal orientation in porous Si. The dangling bond formation is found to be closely related to the surface oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109610
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    The program of global character research of solar-terrestrial system in 22nd solar cycle in China, an overview
    Amsterdam : Elsevier
    Advances in Space Research 11 (1991), S. 57-65 
    Details
    ISSN: 0273-1177
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0273-1177(91)90357-P
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...