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  • 1
    Electronic Resource
    Electronic Resource
    Some properties of bulk Y-Ba-Cu-O compounds containing SiO2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2234-2236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk Y-Ba-Cu-O samples containing Si with nominal compositions of Y:Ba:Cu:Si=1:2:3:x (x=0.2, 0.4, and 0.6) have been prepared by adding SiO2 to the source materials. After a relatively short heat treatment, the resistance transition characteristics of the samples were found to improve as the SiO2 content was increased. Results from ac susceptibility measurements also showed improved values as the SiO2 content was increased. However, as the solid-state reaction was carried out at a lower temperature but for a longer time, the sample resistance increased and the superconductivity was found to degrade.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341693
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of annealing on TlBaCaCuO thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 660-662 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of high-temperature anneals on sequentially deposited TlBaCaCu films in an environment containing O2 and TlOx . From Auger electron spectroscopy depth profiles, it was found that Tl was quite volatile and can be easily eliminated from the thin films after a short treatment at 830 °C. However, the Tl can be incorporated in the films after appropriate treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100911
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  • 3
    Electronic Resource
    Electronic Resource
    Creation of TlCaBaCuO fine features by a wet process (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5215-5217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During the study of the formation of TlBaCaCuO from rf-sputtered Ba-Ca-Cu-O films (Ba:Ca-Cu=2:2:3 in target) it was found that the rf-sputtered materials were relatively unstable in water, in photoresist developer, and even in room atmosphere. To overcome the severe undercutting effect during the chemical etching process resulting from the instability, a Cu protective layer with a thickness of 100–150 A(ring) was adopted for the fine-line patterning. Using a positive photoresist technique, 3-μm lines have been successfully produced. Lines with a width of 150 μm also have been produced on ZrO2 substrates and superconductivity was observed after a heat treatment in an environment containing O2 and Tl gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343157
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of electrodeposited CuInSe2 films by admittance spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 758-760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Junctions of CuInSe2/CdS have been investigated using an admittance spectroscopy technique to obtain information on electrically active states in CuInSe2. The junctions studied were fabricated using electrodeposited p-type CuInSe2 films. The admittance experiments were carried out over a temperature range from 80 to 300 K with a frequency range from 1 to 100 kHz. In devices fabricated using CuInSe2 films with an In/Cu ratio of 1.10, peaks were observed in the conductance-temperature curves with an activation energy of about 50 meV. Characteristic peaks with an activation energy of about 160 meV were found in the devices fabricated using CuInSe2 films with an In/Cu ratio of about 1.25.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341920
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  • 5
    Electronic Resource
    Electronic Resource
    Schottky junctions on CuInSe2 films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 439-441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky junctions have been fabricated by evaporating aluminum on electrodeposited p-type polycrystalline CuInSe2 thin films. The devices showed a rectification effect with an ideality factor of about 2 in the low-forward-voltage region. Results of carrier concentration obtained from C-V measurements of the Schottky devices were found to be consistent with those for CdS/CuInSe2 heterojunctions fabricated on the same substrates. The apparent diffusion potential and carrier concentration of the Al/CuInSe2 Schottky junctions were both found to increase after a short heat treatment at 200 °C in air.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340260
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  • 6
    Electronic Resource
    Electronic Resource
    Indium-doped zinc oxide thin films prepared by rf magnetron sputtering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2400-2401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium-doped zinc oxide films have been prepared by rf magnetron sputtering, using ZnO targets containing up to 10 wt. % In2O3. Room temperature resistivity of the deposited films was found to decrease by about four orders of magnitude as the In2O3 content was increased from 0 to 10 wt. %.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335962
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  • 7
    Electronic Resource
    Electronic Resource
    Transparent CdZnSO thin films with tailored d spacings (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2787-2789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Work has been done to investigate properties of polycrystalline CdZnSO thin films prepared by sputtering. It was found that the magnitude of the diffraction peaks decreased progressively as the ZnO content was increased from 0% to 70% and increased as the ZnO content was further increased from 70% to 100%. The value of the d spacing of the CdZnSO films was also found to be affected by the ZnO content. The absorption edge was examined by transmission measurements and a rapid increase from 2.6 to about 3.2 eV was found in the range from 60% to 80% ZnO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340978
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of Tl-Ca-Ba-Cu-O films by diffusion of Tl into rf-sputtered Ca-Ba-Cu-O (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1122-1124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a rf sputtering method with a single Ca-Ba-Cu-O target (Ca:Ba:Cu=2:2:3), thin films with a thickness of about 1 μm have been deposited on ZrO2 and Si substrates. Diffusion experiments showed that the resistivity can be largely reduced by treating the films in an environment containing O2 and Tl. Treatment experiments at different temperatures further showed that the resistivity was affected by the temperature. By treating at 730 °C for about 1 h, a film on ZrO2 with a transition temperature of about 110 K has been obtained. Zero resistance was achieved at 75 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100661
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  • 9
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O thin films prepared by a multilayer vacuum method (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Y-Ba-Cu-O thin films with a thickness of about 1 μm have been deposited on alumina substrates. The deposition was made by first sequentially evaporating Y/Ba/Cu layers followed by a heat treatment in an environment containing oxygen. The treated films were polycrystalline, and the electrical results showed an onset temperature of about 100 K and a zero-resistance temperature of 78 K for the films treated at 850 °C for 2 h in oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99374
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  • 10
    Electronic Resource
    Electronic Resource
    Chemical etching of Y-Cu-Ba-O thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1523-1524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Y-Ba-Cu-O have been deposited by rf sputtering using a stoichiometric target on alumina, zirconia, and Y2O3 coated silicon substrates. After a brief heat treatment in oxygen, a resistive transition was observed with an onset temperature from 89 to 94.6 K. Etching experiments of the as-deposited films have been made to determine the etching rates of the compound. It was found that reproducible results can be readily obtained using the following solutions: H3PO4/H2O, HNO3/H2O, and HCl/H2O. Using a positive photoresist technology, 3 μm lines have been successfully produced by etching in these solutions. The present patterning process was found to have no deleterious effect on the superconducting characteristics of the Y-Ba-Cu-O films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99695
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