ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The long term performance of today’s SiC based bipolar power devices sufferstrongly from stacking fault formation caused by slip of basal plane dislocations, the latteroften originating from the n-type doped SiC substrate wafer. In this paper, using sequentiallyp-type / n-type / p-type doped SiC crystals, we address the question, whether basal planedislocation generation and annihilation behaves differently in n-type and p-type SiC. We havefound that basal plane dislocations are absent or at least appear significantly less pronouncedin p-type doped SiC, which may become of great importance for the stacking fault problem inSiC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.79.pdf
Permalink