ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The origin of dislocation evolution during SiC crystal growth is usually related to latticerelaxation mechanisms caused by thermal stress. In this paper we discuss dislocation generation anddislocation propagation related to doping and suppression of basal plane dislocations, the latterbeing of particular interest for bipolar electronic devices. We have prepared alternating p-/n-/pdopedSiC crystals using the donor nitrogen and the acceptors aluminum or boron. In addition wedetermined the mechanical properties of n-type and p-type SiC; in particular we measured thecritical shear stress by nano-indentation on c-plane and a-plane 6H-SiC surfaces. A considerablylower basal plane dislocation density is found in aluminum as well as in boron doped p-type SiCcompared to nitrogen doped n-type SiC. It is concluded that the explanation of the reduced basalplane dislocation density in p-type SiC needs the consideration of electronic as well as mechanicaleffects
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.259.pdf