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  • 1
    Electronic Resource
    Electronic Resource
    Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures (1997)
    Springer
    Semiconductors 31 (1997), S. 735-737 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The temperature coefficient of the breakdown voltage of 6H-SiC p-n structures has been investigated. It is shown that the temperature dependence of the breakdown voltage can be explained by charge exchange on deep acceptor levels in the space charge layer. The computational results are in good agreement with the experimental data obtained for boron-doped 6H-SiC p-n structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187080
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1956-1958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitrogen donor levels have been studied by admittance spectroscopy between 20 and 200 K in Schottky barriers made on lightly n-type epitaxial 6H-SiC layers. Measurements at different frequencies yield different freezeout temperatures which in turn are used to determine the donor level energies. Two electron traps at Ec−0.082 eV and at Ec−0.140 eV were detected. These levels are associated with nitrogen, respectively, at the hexagonal sites for the former and at the cubic sites for the latter level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357655
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  • 3
    Electronic Resource
    Electronic Resource
    Surface effects on current mechanisms in 6H-SiC n+pp+ structures passivated with a deposited oxide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1688-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bipolar n+pp+ diodes fabricated by nitrogen implantation and passivated with a deposited oxide have been characterized. Current–voltage measurements in a large temperature range have been analyzed. We also used the optical beam induced current method to represent the depleted zone at the surface around a reverse-biased device. We show that phenomena as the diameter-dependent current for low reverse and forward biases, the specific value for the energy activation of current under low bias equal to 0.65 eV, the reverse current–voltage characteristics evolution with time, or the anomalous spread of the depleted layer around a reverse-biased diode can be correlated with the presence of the deposited oxide as a passivation layer. A study of the current–time characteristic, obtained for a set reverse bias, is used to prove the presence of charges in the oxide and interface states responsible for an eventual inversion channel along the mesa. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368237
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of injection pressure on the success rate of peribulbar block (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 51 (1996), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The aim of this prospective double-blind study was to evaluate the effect of the pressure on injection of local anaesthetic during peribulbar anaesthesia. Fifty patients scheduled for cataract surgery under peribulbar anaesthesia, with a two injection site technique, were randomly assigned to receive a mixture of 5ml of etidocaine 1%, 4ml of bupivacaine 0.5% and hyaluronidase SOW, injected under a constant pressure of either 140g.cm-2 (group 1) or 250g.cm-2 (group 2). After orbital compression, the degree of akinesia of the extra-ocular and orbicular muscles was graded by clinical assessment. A significantly higher rate of satisfactory akinesia of the extra-ocular muscles was found in group 2 (72% vs 28% in group 1) (p 〈 0.01). No significant relationship was found between the time taken to administer the anaesthetic mixture at constant pressure and the quality of the block.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1996.tb07896.x
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretical investigation of incomplete ionization of dopants in 6H–SiC metal-oxide-semiconductor capacitors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2232-2236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of incomplete ionization of dopants on the capacitance–voltage (C–V) characteristics in 6H–SiC metal-oxide-semiconductor (MOS) capacitors has been investigated. The present exploration is based on the one-dimensional numerical solving of Poisson's equation using the finite-difference method with a nonuniform mesh size. The results obtained from this approach are in good agreement with the first analytical results reported by Bouillon and Skotnicki in the case of indium impurities in silicon [IEEE Electron Device Lett. 19, 19 (1996)]. For p-type 6H–SiC material, characterized by deeper doping impurity energies (principally aluminum and boron), simulations predict the occurrence of a "kink effect" on the C–V curves, depending on temperature and doping level, that could lead to experimental errors in the extraction of MOS device parameters, including effective doping level, interface trap density, and fixed oxide charge. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371061
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of silicon carbide n+pp+ diodes with an N-implanted n+ emitter (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3073-3077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon carbide bipolar diodes fabricated by nitrogen implantation with a subsequent annealing at 1100 °C and passivated with a deposited oxide have been characterized. Capacitance– and current–voltage measurements have been made to analyze the quality of the junction. Admittance spectroscopy shows the presence of three peaks: two correspond to nitrogen and aluminum shallow levels; the third one has been more precisely studied by deep level transient spectroscopy. It presents an activation energy of Ev+0.49 eV and is probably due to a hole trap created by the nitrogen implantation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368507
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  • 7
    Electronic Resource
    Electronic Resource
    Calculation of theoretical capacitance–voltage characteristics of 6H–SiC metal–oxide–semiconductor structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 424-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of nonuniform interface trap distributions on capacitance–voltage (C–V) characteristics of 6H–silicon carbide metal–oxide–semiconductor (MOS) capacitors has been investigated. Theoretical C–V curves have been calculated in order to study the influence of: (i) the nature (donor or acceptor) of the traps, (ii) the interface state density peak in the band gap and the peak magnitude. The incomplete ionization of dopants and the depletion in the polysilicon gate have also been taken into account to fit experimental data. A good agreement is observed between the interface state spectrum obtained in our calculation and the one obtained by the Terman's method. Thus, exact parameters of the MOS structures can be obtained. A peak of donor states is detected at Ev+0.65 eV, and an effective oxide charge is measured to 4.9×1012 cm−2, which denotes a poor SiO2–SiC interface quality. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373676
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5464-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion can be used to compensate the n-type layer of a p+nn+ 6H-silicon carbide structure in order to increase its high-voltage capabilities. Measurements under reverse biases for a current range from 10 to 500 μA show that this process is very efficient for working temperatures about 300 K. Indeed we obtained a voltage of 670 V for a reverse current of 10 μA instead of the 120 V calculated for a structure without boron diffusion. Nevertheless, the breakdown voltage decreases rapidly when the temperature increases. Capacitance measurements show that the measured doping level in the n-type layer evolves in the same way as the temperature (it ranges from 1013 cm−3 at 300 K to 1017 cm−3 at 500 K). A great concentration of boron seems to be responsible for this doping variation with temperature. Admittance spectroscopy reveals the presence of D centers at 0.62 eV above the valence band associated to boron at concentration similar or superior to nitrogen concentration in the n-type layer. The increase of the doping level with the temperature is responsible for this decrease of the breakdown voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362736
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  • 9
    Electronic Resource
    Electronic Resource
    Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal-oxide-silicon carbide structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2340-2342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed thermally stimulated ionic current measurements on aluminum-oxide-silicon carbide (3C and 6H polytypes) capacitors to study the trapping–detrapping properties of alkali mobile ions at the oxide interfaces. Two traps, at ∼1.0 and ∼1.4 eV, have been detected at the oxide/SiC interface; only one (at ∼1.0 eV) is present at the aluminum/oxide interface. Studies of the energy dependence of the oxide traps with the electric field are reported here for comparison with silicon structures. A numerical method has been used to calculate the energy distributions of these traps, which reveal some differences between the two kinds of structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113976
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  • 10
    Electronic Resource
    Electronic Resource
    Le langage de la violence dans les enluminures des Grandes chroniques de France dites de Charles V
    Amsterdam : Elsevier
    Journal of Medieval History 17 (1991), S. 149-170 
    Details
    ISSN: 0304-4181
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: History
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-4181(91)90016-E
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