Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures (1997)
    Springer
    Semiconductors 31 (1997), S. 735-737 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The temperature coefficient of the breakdown voltage of 6H-SiC p-n structures has been investigated. It is shown that the temperature dependence of the breakdown voltage can be explained by charge exchange on deep acceptor levels in the space charge layer. The computational results are in good agreement with the experimental data obtained for boron-doped 6H-SiC p-n structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187080
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Surface effects on current mechanisms in 6H-SiC n+pp+ structures passivated with a deposited oxide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1688-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bipolar n+pp+ diodes fabricated by nitrogen implantation and passivated with a deposited oxide have been characterized. Current–voltage measurements in a large temperature range have been analyzed. We also used the optical beam induced current method to represent the depleted zone at the surface around a reverse-biased device. We show that phenomena as the diameter-dependent current for low reverse and forward biases, the specific value for the energy activation of current under low bias equal to 0.65 eV, the reverse current–voltage characteristics evolution with time, or the anomalous spread of the depleted layer around a reverse-biased diode can be correlated with the presence of the deposited oxide as a passivation layer. A study of the current–time characteristic, obtained for a set reverse bias, is used to prove the presence of charges in the oxide and interface states responsible for an eventual inversion channel along the mesa. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368237
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Angle etch control for silicon carbide power devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 236-238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon carbide plasma etching results are reported. Etching experiments are performed in a distributed electron cyclotron resonance reactor, using a SF6/O2 gas mixture, on both 3C- and 6H-SiC. A special interest has been given to the slope of the etched sidewalls. Slopes between 30° and 80° have been achieved by varying selectivities between SiC and the SiO2 masking layer. Two parameters have been investigated to modulate selectivity: bias voltage and O2 additive flow. A wide range of selectivities (from 1 to 6.5) has been obtained for suitable etch rate (100 to 270 nm/min) with very smooth surfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117935
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5464-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion can be used to compensate the n-type layer of a p+nn+ 6H-silicon carbide structure in order to increase its high-voltage capabilities. Measurements under reverse biases for a current range from 10 to 500 μA show that this process is very efficient for working temperatures about 300 K. Indeed we obtained a voltage of 670 V for a reverse current of 10 μA instead of the 120 V calculated for a structure without boron diffusion. Nevertheless, the breakdown voltage decreases rapidly when the temperature increases. Capacitance measurements show that the measured doping level in the n-type layer evolves in the same way as the temperature (it ranges from 1013 cm−3 at 300 K to 1017 cm−3 at 500 K). A great concentration of boron seems to be responsible for this doping variation with temperature. Admittance spectroscopy reveals the presence of D centers at 0.62 eV above the valence band associated to boron at concentration similar or superior to nitrogen concentration in the n-type layer. The increase of the doping level with the temperature is responsible for this decrease of the breakdown voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362736
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...