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1

Digitale Medien

Surface effects on current mechanisms in 6H-SiC n+pp+ structures passivated with a deposited oxide (1998)

Ortolland, S. ; Raynaud, C. ; Locatelli, M. L. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 1688-1692

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Bipolar n+pp+ diodes fabricated by nitrogen implantation and passivated with a deposited oxide have been characterized. Current–voltage measurements in a large temperature range have been analyzed. We also used the optical beam induced current method to represent the depleted zone at the surface around a reverse-biased device. We show that phenomena as the diameter-dependent current for low reverse and forward biases, the specific value for the energy activation of current under low bias equal to 0.65 eV, the reverse current–voltage characteristics evolution with time, or the anomalous spread of the depleted layer around a reverse-biased diode can be correlated with the presence of the deposited oxide as a passivation layer. A study of the current–time characteristic, obtained for a set reverse bias, is used to prove the presence of charges in the oxide and interface states responsible for an eventual inversion channel along the mesa. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.368237

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2

Digitale Medien

Angle etch control for silicon carbide power devices (1996)

Lanois, F. ; Lassagne, P. ; Planson, D. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 236-238

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Silicon carbide plasma etching results are reported. Etching experiments are performed in a distributed electron cyclotron resonance reactor, using a SF6/O2 gas mixture, on both 3C- and 6H-SiC. A special interest has been given to the slope of the etched sidewalls. Slopes between 30° and 80° have been achieved by varying selectivities between SiC and the SiO2 masking layer. Two parameters have been investigated to modulate selectivity: bias voltage and O2 additive flow. A wide range of selectivities (from 1 to 6.5) has been obtained for suitable etch rate (100 to 270 nm/min) with very smooth surfaces. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.117935

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3

Digitale Medien

Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures (1996)

Ortolland, S. ; Raynaud, C. ; Chante, J. P. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 5464-5468

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Boron diffusion can be used to compensate the n-type layer of a p+nn+ 6H-silicon carbide structure in order to increase its high-voltage capabilities. Measurements under reverse biases for a current range from 10 to 500 μA show that this process is very efficient for working temperatures about 300 K. Indeed we obtained a voltage of 670 V for a reverse current of 10 μA instead of the 120 V calculated for a structure without boron diffusion. Nevertheless, the breakdown voltage decreases rapidly when the temperature increases. Capacitance measurements show that the measured doping level in the n-type layer evolves in the same way as the temperature (it ranges from 1013 cm−3 at 300 K to 1017 cm−3 at 500 K). A great concentration of boron seems to be responsible for this doping variation with temperature. Admittance spectroscopy reveals the presence of D centers at 0.62 eV above the valence band associated to boron at concentration similar or superior to nitrogen concentration in the n-type layer. The increase of the doping level with the temperature is responsible for this decrease of the breakdown voltage. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.362736

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4

Digitale Medien

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures (1997)

Lebedev, A. A. ; Ortoland, S. ; Raynaud, C. ; [weitere]

Springer

Semiconductors 31 (1997), S. 735-737

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ISSN: 1063-7826

Quelle: Springer Online Journal Archives 1860-2000

Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik

Notizen: Abstract The temperature coefficient of the breakdown voltage of 6H-SiC p-n structures has been investigated. It is shown that the temperature dependence of the breakdown voltage can be explained by charge exchange on deep acceptor levels in the space charge layer. The computational results are in good agreement with the experimental data obtained for boron-doped 6H-SiC p-n structures.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1134/1.1187080

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