Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 338-342 (May 2000), p. 1045-1048 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.1045.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 338-342 (May 2000), p. 1599-1602 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.1599.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Characterization of TaSi2–Si composites for use as wide-bandpass optical elements for synchrotron radiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6803-6810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wide rocking curves of matrix reflections of the in situ eutectic composite TaSi2–Si make wafers of this material attractive for use as wide-bandpass monochromators for synchrotron radiation, and characterization of wafers of TaSi2–Si for use with energies normally accessible at storage rings (i.e., 5–40 keV) is the focus of the present report. A wafer with [111]Si orientation and a wafer with [110]Si orientation are studied. The high degree of preferred orientation of the TaSi2 rods relative to the Si matrix is examined using synchrotron Laue patterns, and the 100TaSi2, 003TaSi2, 101TaSi2, and 102TaSi2 reflections are used to establish the orientation relationship and to determine that the spread of rod orientations is at least 5° and probably no greater than 6°. Double-axis diffractometry with Cu Kα radiation reveals matrix reflections with rocking curve widths that are about 20 times broader than those from perfect Si and with peak reflectivities approaching 20%. The rocking curves widths are found to be relatively insensitive to irradiated area, thus indicating that most of the observed width is not due to long-range bending. Triple-axis diffractometry with Cu Kα radiation reveals that considerable compressive strain exists in the matrix and that much of the width of the diffraction peak is due to mosaicity. The performance of the [111]Si TaSi2–Si wafer and a perfect [111] Si wafer as monochromators for microradiography are compared, and a gain of an order of magnitude in x-ray intensity delivered to the sample is demonstrated with the composite crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361501
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Depth dependence of residual strains in polycrystalline Mo thin films using high-resolution x-ray diffraction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6872-6879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnitude of the stress in a thin film can be obtained by measuring the curvature of the film–substrate couple. Crystal curvature techniques yield the average stress throughout the film thickness. On a microscopic level, the details of the strain distribution, as a function of depth through the thickness of the film, can have important consequences in governing film quality and ultimate morphology. A new method, using high-resolution x-ray diffraction to determine the depth dependence of strain in polycrystalline thin films, is described. The technique requires an analysis of the diffraction peak shifts of at least six independent {hkl} scattering vectors, at a variety of penetration depths from the free surface of the film. The data are then used to determine the magnitude and directions of the strain eigenvalues in a laboratory reference frame for each penetration depth from the free surface of the film. A linear elastic model was used to determine the strains in successive slabs of the film. Results are reported for two Mo films, with nominal thicknesses of 50 and 100 nm, which were deposited by planar magnetron sputtering onto Si (100) substrates. This technique can provide quantitative insight into the depth variation of residual strains (stresses) in thin films and should work with a wide variety of materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361509
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Growth textures of thick sputtered films and multilayers assessed via synchrotron transmission Laue (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3812-3819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth textures of thick sputtered Mo metallizations and Mo/W multilayers, were characterized via a synchrotron white-beam (WB) x-ray transmission Laue technique. Transmission x-ray diffraction studies of Mo specimens up to 61 μm thick were performed with WB synchrotron radiation; while the practical thickness limit for similar observations using a conventional laboratory Cu K(α) x-ray source is ten times smaller. This unique approach used polychromatic x rays to simultaneously produce diffraction from a wide spread of orientations of many crystallographic planes for all the grains within a relatively large specimen volume (≈60×106 μm3). These patterns were obtained for polycrystalline 31- and 61-μm-thick Mo/W multilayer specimens, and a 35-μm-thick-monolithic Mo foil specimen. In all three cases the alignment of specimen grains was similar to what would be expected for single-crystal transmission patterns, except that the recorded intensity distributed was less localized. The WB transmission images were indexed using a reciprocal space construction for the Laue case. In the multilayers, the grains were oriented out-of-plane such that 〈110〉 crystallographic planes were aligned in the direction of sputter growth, while in the monolithic Mo specimen 〈111〉 crystallographic planes were so aligned, i.e., perpendicular to the deposition substrate. A spread in orientation of ∼5° was measured in the multilayer specimens, while the monolithic Mo specimen showed a spread of ∼30° when compared to a perfect single-crystal orientation. Preferred orientation was also observed within the plane of growth to varying degrees for all three samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360746
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Characterization of Si-TaSi2 in situ composites by synchrotron white beam topography and by double axis diffractometry (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1737-1742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ Si-TaSi2 composites are studied by synchrotron white beam topography and by double axis diffractometry. These results show that the single crystal Si matrix is of excellent quality: Rocking curve widths are between 40 and 60 s of arc, and the topographs do not exhibit asterism. Diffuse radial streaks in the Laue patterns originate from diffraction by the TaSi2 rods in the matrix: The K-absorption edge of filters placed in the incident x-ray beam produces a sharp change in contrast in the streaks, and this is used to determine the d spacings present in the streaks and to show that considerable preferred orientation exists between the TaSi2 rods and the Si matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354081
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    YB66 as a new soft x-ray monochromator for synchrotron radiation (abstract) : Proceedings of the 4th International conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1321-1321 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: YB66, a complex binary semiconducting compound with a cubic crystal structure and a lattice parameter of 23.44 A(ring), is potentially a very good candidate for monochromatization of soft x-ray synchrotron radiation. The features such as: a large interatomic spacing, lack of absorption edges by the constituent elements in the region 1–2 keV, very narrow intrinsic rocking curves for (400) and (222) reflections and good thermal and mechanical properties make the material very useful. Using the known structure factors for the (400) and (222) reflections, having 2d values of 11.76 and 13.53 A(ring), respectively, their rocking curves have been calculated and are shown [J. Wang, G. Shimkaveg, W. Goldstein, M. Eckart, T. Tanaka, Z. Rek, H. Tompkins, Nucl. Instrum. Methods A 291, 243 (1990)] to be comparable to or better than that of beryl (101¯0). A novel indirect heating floating zone method for growing large size crystals was used by Tanaka and his coworkers in Japan [T. Tanaka, S. Otani, and Y. Ishizawa, J. Cryst. Growth 73, 31 (1985)]. Numerous modifications of this technique and double-zone passes were applied to reduce sub grain structure and lattice deformations. The crystalline perfection and absence of defects is critical to obtaining high energy resolution and good crystal reflectivity. Crystals large enough to accept 1 mrad of radiation, with growth direction [100] and [110] were grown. Rocking curve measurements, etch pit density, and x-ray white beam topography are used to characterize the quality of these crystals as a function of some critical growth parameters. Most crystals exhibit the existence of sub grain boundaries. Areas perfect enough were observed to give ∼ 0.5 eV energy resolution. Recent experiments in crystal growth, results of crystals characterization, and comparison with theoretical calculations will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143058
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Effects of high carbon concentration upon oxygen precipitation and related phenomena in CzSi (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 849-855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of high carbon concentration upon oxygen precipitation and related phenomena in Czochralski (Cz) silicon have been investigated by combining various furnace and rapid thermal anneals. Our data show that oxide precipitate (OP) density, estimated from changes in interstitial oxygen concentration (ΔOi), increases with increasing substitutional carbon concentration, Cs, while thermal donor (TD) formation is inhibited at high Cs. Even though ΔOi increases monotonically with Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs∼4 ppma) exhibit Pendellösung fringes, indicating a strain-free bulk state. Our transmission electron microscope and optical microscopic data also show very few resolvable structural defects associated with precipitates inside the bulk Si. Using a thermodynamic and kinetic model, we attempt to explain: (1) reduced thermal donor formation, (2) lack of bulk stress notwithstanding high ΔOi, and (3) predominantly polyhedral precipitate morphologies in high carbon content CzSi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341936
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100114
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Analysis of cobalt-doped iron oxide thin films by synchrotron radiation
    Amsterdam : Elsevier
    Thin Solid Films 154 (1987), S. 439-445 
    Details
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-6090(87)90386-5
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...