ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A holographic SiC grating has been fabricated by means of reactive ion beam etching in Ar+CHF3 mixture and by using photoresist as an etching mask. The etch rates of SiC and photoresist depend on the CHF3 concentration in Ar+CHF3 mixture. A maximum value for a ratio of the etch rate of SiC to that of photoresist was found to be 1.29 for 67%Ar+33%CHF3 mixture. Diffraction efficiency of an ion-beam etched grating of 1200 l/mm grooves coated with Au was measured by using synchrotron radiation and the Al kα emission line from an x-ray tube. The diffraction efficiency of the first order was 4.5%–9.3% in the soft x-ray region between 8.34 and 120 A(ring) with a small amount of the higher order and the scattered light components. In addition, it is demonstrated that SiC can be etched in SF6 gas by synchrotron radiation excitation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1143037
Permalink