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  • 1
    Electronic Resource
    Electronic Resource
    Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2281-2283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Mg1/3Nb2/3)O3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable precursor solutions and appropriate processing were used to greatly reduce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown that PMN thin films exhibit a relaxor-like behavior. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121702
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Defects, structure, and chemistry of InP–GaAs interfaces obtained by wafer bonding (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4135-4146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the crystallographic structure of GaAs/InP interfaces obtained by wafer fusion following different procedures. Plan-view and cross-sectional transmission electron microscopy reveal that the interface is not only composed of a regular array of two sets of edge dislocations and is more complex than generally supposed. If a twist is created due to misalignment of the two substrates, the dislocations are not edge dislocations but also have a screw component. Dislocations for which the Burgers vectors have a component normal to the interface are also present. Those dislocations probably result from steps and some of them accommodate the tilt between the two substrates. Inclusions and voids as well as a low number of volume dislocations are present in all the samples. The observed volume dislocation density near the interface lies in the 105–107 cm−2 range and these volume dislocations may be associated with thermal mismatch. The origin of all these defects is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373042
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3835-3841 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature and the role of 1 to 5 nm thick TiO2 seed layers for the growth of textured PbTiO3 and Pb(Zr,Ti)O3 thin films on textured Pt(111) thin film substrates have been studied. Under otherwise identical in situ sputter deposition process conditions, the PbTiO3 texture could be turned from (100) to (111) orientation by adding the seed layer. This is demonstrated by patterning the TiO2 film. Auger electron spectroscopy and x-ray photoemission spectroscopy showed that the seed layer was a continuous TiO2 film. X-ray photoelectron diffraction measurements revealed epitaxial ordering in the seed layer. As there is no azimutal order among the Pt grains, the reduced information of azimutally averaged polar cuts is obtained. These give strong evidence for a strained rutile (110) structure. Various deposition experiments indicated that the TiO2 is effective only when it is ordered before the PbTiO3 nucleation starts. The epitaxial relationship between PbTiO3(111) and Pt(111) is thus mediated by the intermediate, epitaxial TiO2 film, which is dissolved or transformed to PbTiO3 afterwards. The observed growth behavior is discussed in terms of surface and interface energies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366614
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  • 4
    Electronic Resource
    Electronic Resource
    Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices. Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600 °C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116529
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  • 5
    Electronic Resource
    Electronic Resource
    A theoretical and experimental study of non-perfect grain boundary dislocations (1997)
    Springer
    Interface science 4 (1997), S. 29-45 
    Details
    ISSN: 1573-2746
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The aim of this paper is to discuss the possible appearance of non-perfect grain boundary dislocations in grain boundaries in a variety of materials. To begin with, we survey some of the different theoretical treatments which enable grain boundary dislocations and grain boundary structures to be described. The emphasis is put on more recent ideas, and on illustrating the power of group theory in identifying non-perfect grain boundary dislocations. A derivation of the geometric characteristics of interfacial dislocations is carried out in a simple and tutorial way, in a number of representative examples. It is shown that grain boundary dislocations may be divided into three classes: (1) perfect grain boundary dislocations, (2) imperfect grain boundary dislocations, and (3) partial grain boundary dislocations. Experimental transmission electron microscope evidence is then presented for boundaries in the diamond cubic structure, and it is shown that imperfect and partial grain boundary dislocations play an important role in this system. Finally, a comparison of some grain boundary dislocation types in different materials is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00200837
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    Paper (German National Licenses)
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