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  • 1
    Electronic Resource
    Electronic Resource
    Thermal configurations of oxygen in silicon (1992)
    Springer
    Applied physics 55 (1992), S. 317-323 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.−r ; 71.55.−i ; 81.40.−z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The central position and the infrared absorption coefficient of the 9 μm band of Si samples were measured with Fourier transform infrared spectroscopy (FTIR) at temperatures from T=77 K to 775 K. The infrared absorption coefficients were corrected by considering background absorption and free carrier absorption calculated from the increased free carrier concentration and from the resistivity determined from Hall effect measurements. We found the central position of the 9 μm band to shift to longer wavelengths with increasing temperature. The concentration [Oi] of interstitial oxygen is almost constant for T〈600 K, but decreased rapidly for T〉600 K. These results verified there are two types of thermal configurations of oxygen in silicon: The bonded Si2O configuration with a binding energy E b≈0.8 to 1.0 eV at T≈77 K to 600 K, and the Si2O configuration coexists with a quasi-free interstitial oxygen (QFIO) state for T〉600 K. The lattice potential barrier E L, which retards QFIO atoms from migrating in the lattice, is estimated to be 1.5 to 1.6 eV. From these configurations the anomalous diffusivity of oxygen in silicon can be explained quite well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324078
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  • 2
    Electronic Resource
    Electronic Resource
    NUTRITIONAL STUDIES ON SOYBEAN CURD PRODUCED BY CALCIUM SULFATE PRECIPITATION OF SOYBEAN MILK (1973)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 38 (1973), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1973.tb02161.x
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  • 3
    Electronic Resource
    Electronic Resource
    PREPARATION OF SOYBEAN CHEESE USING LACTIC STARTER ORGANISMS. Effects of Mold Ripening and Increasing Concentrations of Skim Milk Solids (1971)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 36 (1971), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: SUMMARY– Soybean cheeses were prepared from blends of skim milk powder and soybean milk in which the skim milk powder contributed 0, 25, 50 and 75% of total dry weight. The amount of skim milk had little effect on the flavor of the finished cheese, due to the dominating effect of the beany flavor of the soybeans. Similarly, the skim milk had little effect on the texture of the finished cheese, indicating that only a small amount of fibrous matter from the soybeans is necessary to impart a mealy texture to the product. Mold ripening resulted in desirable changes in texture, but these were offset by the development of bitter flavors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1971.tb02022.x
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  • 4
    Electronic Resource
    Electronic Resource
    Combined experimental and theoretical study of the C-H bond strength and the gas phase acidity of triacetylene, C"6H"2, and the electron affinity of the C"6H^. radical
    Amsterdam : Elsevier
    Chemical Physics Letters 229 (1994), S. 429-434 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(94)01075-7
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretical prediction of the structure and the bond energy of the gold (I) complex Au^+ (H"2O)
    Amsterdam : Elsevier
    Chemical Physics Letters 225 (1994), S. 416-420 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(94)87104-3
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  • 6
    Electronic Resource
    Electronic Resource
    The effects of gas ambients on the formation of surface and bulk defects in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6673-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of gas ambients on the density of oxide precipitates and stacking faults have been studied in samples annealed in various gas ambients. It is found that the densities of oxide precipitates and bulk and surface stacking faults in oxynitrided samples are higher than those of samples annealed in oxygen, nitrogen, trichloroethane plus oxygen, and pure ammonia. Also, stacking faults have been observed at the surface of the samples annealed in an ammonia ambient. These observations are contrary to our expectations, and several models are proposed to explain the phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342022
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  • 7
    Electronic Resource
    Electronic Resource
    Deep-level impurities in edge-defined film-fed-growth silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 801-810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed-growth (EFG) Si is investigated using deep-level transient spectroscopy and surface photovoltage. An impurity energy level of CrB was found at 0.27 eV above the valence band in EFG Si contaminated with Cr. The Cr diffusion coefficient in EFG Si was obtained as 2×10−17 cm2/s at room temperature using association and dissociation of CrB pairs after a 210 °C dissociation anneal. Most of the deep-level transient spectroscopy (DLTS) spectra are not analyzable with conventional methods due to abnormally broad peaks. DLTS spectra of as-grown EFG Si are modeled using a Gaussian distribution of impurity energy states. The simulated DLTS peaks agree well with measured data explaining the origin of the deep-level impurities of EFG Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360338
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  • 8
    Electronic Resource
    Electronic Resource
    In situ gettering of edge-defined film-fed growth silicon in a CO ambient (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 371-377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed growth (EFG) Si grown with carbon monoxide (CO) added to the Ar ambient during crystal growth yields solar cells with higher efficiencies than when grown without CO. This increase in cell efficiency is not fully understood. Surface photovoltage, deep-level transient spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, and transmission electron microscopy were used to determine the minority carrier diffusion lengths, impurity distributions, and defect structures in uncontaminated, Cr contaminated, and V contaminated EFG material grown with and without CO added to the Ar ambient. We conclude that "SiC-like'' complexes in the near-surface region of the CO ambient material act as gettering sites during crystal growth, and that this gettering action results in lower bulk impurity levels and higher solar cell efficiencies. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359332
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  • 9
    Electronic Resource
    Electronic Resource
    Gettering in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2974-2985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of gettering experiments have been carried out for a better understanding of gettering mechanism(s) in silicon. We find that oxidation and oxynitridation, which are known to inject silicon interstitials, do not getter metallic impurities such as Au, Cu, Fe, and Ni while phosphorus (P) diffusion does produce effective gettering of these metals. We also find from P diffusion, Ar ion implantation, and Ni film gettering performed as a function of temperature, there exists an optimum gettering temperature. From a comprehensive discussion of the existing models, we conclude that neither the enhanced metal solubility nor the silicon interstitial model explains our experimental results. Furthermore, it is shown that generation of dislocations is not a prerequisite for effective gettering. A model, based on the segregation of impurities at high temperatures and on the release/diffusion of metallic impurities at lower temperatures, is proposed to explain all of our results. A general form of the segregation coefficient has been developed using an extended concept of solid solubility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342714
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  • 10
    Electronic Resource
    Electronic Resource
    Kinetics of gettering in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5858-5864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two basic functions of getters in silicon during gettering processes are investigated in detail. The sink action of getters for absorbing impurities is described by a gettering parameter g, which relates to the diffusion ratio gd, segregation coefficient S, and the activation energies Em,Si, Em,G of impurities in intrinsic Si and in the getter phase. The kickout mechanism is suggested for describing the diffusion of impurities because of the contribution of Si interstitials to kick out the impurities to be gettered. Based on the interaction of Si interstitials with impurities and the influence of the sink in absorbing impurities, a set of gettering equations is derived and used to calculate the gettering of gold in silicon with back surface getters. Theoretical results agree well with reported experimental data and five conclusions are provided to determine the optimal gettering conditions for a given gettering cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350482
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