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  • 1
    Electronic Resource
    Electronic Resource
    Temporal intensity modulation of spectral lines in a low-frequency discharge in argon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3855-3862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent modulation of the emission intensities of several Ari and Arii spectral lines was measured with the time-to-amplitude conversion method for an argon discharge at 50 kHz occurring between the electrodes of an asymmetric parallel plate etch reactor. Under the assumptions that the life time of an emitting state is short compared to the electric field period and that the state is populated by electron impact from the ground state, the line intensity becomes proportional to the corresponding excitation rate coefficient. This time-dependent rate coefficient is calculated from the electron energy distribution obtained by solving the quasistationary Boltzmann equation where the plasma electric field is taken to be proportional to the measured electrode potential. Good agreement between the time dependencies of measured and calculated line intensities is achieved for the selected 6d(1/2)01 →4p(1/2)1 transition in Ari if the amplitude of the plasma field is adjusted to 13 V/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341366
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3Ox thin films on sapphire using a Y-stabilized ZrO2 buffer layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 222-224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial, c-oriented YBa2Cu3Ox thin films were deposited by dc sputtering on (11¯02)-sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO2 (YSZ), which was grown by rf magnetron sputtering. The epitaxy of the YSZ and the YBa2Cu3Ox films was proved by Rutherford backscattering spectrometry combined with ion channeling. The YBa2Cu3Ox films exhibited transition temperatures of 90 K and had critical current densities exceeding 1.2×106 A/cm2 at 77 K in zero magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105972
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Motion of ions in an electron cyclotron resonance plasma (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2890-2892 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The motion of ions emerging from an electron-cyclotron-resonance plasma source has been investigated. Trajectories have been calculated by solving the ion equations of motion in a divergent magnetic field and an electrostatic longitudinal accelerating field which has to be evaluated self-consistently. The trajectory calculations have been combined with a Monte Carlo procedure for choosing the initial ion phase space variables in order to study the propagation of the ion distribution function. It is shown that outside the chamber the spatial profile of this distribution is increasingly broadened with distance from the second magnet due to the diverging magnetic field lines, while at the same time the ions gain energy from the electrostatic field. For an argon plasma a mean ion beam energy of about 16 eV with respect to the plasma source potential results at the target plane in a distance of 60 cm from the source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110316
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  • 4
    Electronic Resource
    Electronic Resource
    Sputtering of YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ trilayers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3304-3306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ-trilayers were grown by sputtering from stoichiometric targets. The YBa2Cu3O7−δ (YBCO) films were deposited by dc-magnetron sputtering. For the NdAlO3 films, rf-magnetron sputtering was used. The individual YBCO films revealed critical-current densities up to 3×106 A/cm2 at 77 K. The bilayer and trilayer structures were characterized by x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron microscopy (TEM). The channel yield χmin of the YBCO film on top was 15% for an in situ deposited trilayer. The epitaxial growth of the subsequent layers was proved by cross-sectional TEM. Although the NdAlO3 layer contained misoriented grains, the top YBCO layer grows in single orientation over these areas. Preliminary electrical measurements show that NdAlO3 is a useful insulating dielectric for microelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106674
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    Paper (German National Licenses)
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