Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 3304-3306
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ-trilayers were grown by sputtering from stoichiometric targets. The YBa2Cu3O7−δ (YBCO) films were deposited by dc-magnetron sputtering. For the NdAlO3 films, rf-magnetron sputtering was used. The individual YBCO films revealed critical-current densities up to 3×106 A/cm2 at 77 K. The bilayer and trilayer structures were characterized by x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron microscopy (TEM). The channel yield χmin of the YBCO film on top was 15% for an in situ deposited trilayer. The epitaxial growth of the subsequent layers was proved by cross-sectional TEM. Although the NdAlO3 layer contained misoriented grains, the top YBCO layer grows in single orientation over these areas. Preliminary electrical measurements show that NdAlO3 is a useful insulating dielectric for microelectronic applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106674
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