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  • 1
    Electronic Resource
    Electronic Resource
    Bradford : Emerald
    The @journal of services marketing 13 (1999), S. 517-535 
    ISSN: 0887-6045
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: Looks at the sports industry and addresses the current situation for authors seeking to publish in the area of sports marketing. Sports currently represents the eleventh largest industry in the USA. Despite this, there are few mainstream marketing journals willing to publish manuscripts on sports marketing. In an effort to circumvent this problem, some sports marketing authors have "disguised" their research under the guise of "servicescapes" or leisure services. Looks at the topical content of the leading outlet for sports marketing manuscripts, Sport Marketing Quarterly. The author classifies the articles into 18 categories. Sponsorship is the most frequent topic for sport marketing papers, followed by general research and research on fans, spectators, and participants. Provides an extensive bibliography of sport-marketing articles published in academic journals. While a few of these are in marketing journals, the vast majority are published "out of field".
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Bradford : Emerald
    The @journal of services marketing 14 (2000), S. 323-336 
    ISSN: 0887-6045
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: Explores the effects of advertising in a sports arena on message recall, purchase intentions, and actual purchase behavior. The findings from this study suggest that consumers can recall at least some of the ads they are exposed to in these captive situations but most do not produce any lasting memory trace. The data also indicate that several independent variables, most notably frequency of exposure to the advertising message, are positively associated with recall, purchase intentions and actual purchasing behavior. The findings from this study indicate that advertisements in this setting can have an impact on the behavior of consumers. However, more research is needed in this setting to identify specific execution variables which differentiate between ads which create an impact, and those that do not.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 597-604 
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: A theoretical study was performed on the structure of both the native and inhibited metalloproteinase Ht-d (E.C. 3.4.24.42) solved at 2.0 Å resolution. The energy maps calculated by program GRID clearly showed the extended binding site of Ht-d and allowed localization and characterization of the pockets S1–S3 and S1′–S3′. The GRID energy contour maps point out the particular shape of the S1′ pocket in agreement with experimental density maps and inhibited Ht-d structures. Based on the high degree of sequence homology of the Ht-d active site to that of mammalian metalloproteinases, the characterization of active site pockets was extended to neutrophil collagenase, fibroblast collagenase, stromelysin 1 and 2. Thirty residues of the Ht-d propeptide were modeled and optimized with reference to the Ht-d structure, giving insight to the mechanism of natural inhibition in metalloproteinase proenzymes. Kinetic measurements of Ht-d inhibition by a series of synthetic peptides show, in agreement with our Ht-d propeptide model, the crucial role of cysteine and adjacent residues in the specificity of Ht-d propeptide. This study suggests the structural link between Ht-d and mammalian metalloproteinases, contributing to the understanding of the mechanism of natural and synthetic inhibitor binding to metalloproteinases. Therefore, Ht-d is a good model system for the design of novel inhibitors against these enzymes with enhanced potency and specificity.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Gene Structure and Expression 950 (1988), S. 338-345 
    ISSN: 0167-4781
    Keywords: (Rat lung) ; Development ; Gene size ; Lung surfactant ; Polyadenylation ; Type II cell ; mRNA
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
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  • 5
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Dendritic cells (DCs) have the unique capacity to initiate primary and secondary immune responses. They acquire antigens in peripheral tissues and migrate to lymphoid organs where they present processed peptides to T cells. DCs must therefore exist in distinct functional states, an idea that is ...
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 83 (1979), S. 2523-2527 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2581-2589 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical mechanisms that determine the current transport in reverse-biased Schottky diodes on undoped "device-grade'' hydrogenated amorphous silicon (a-Si:H) are elucidated. The current-voltage (J-V) curves for several Schottky diodes up to reverse-biases of 40 V have been measured at temperatures between 40 and 180 °C. The reverse currents generally increase approximately exponentially with reverse bias. The decrease of the apparent barrier height as obtained from internal photoemission experiments is in good agreement with the decrease of the thermal activation energy with reverse bias. Extra information on the current transport mechanism can be obtained from the bias dependence of the prefactor in the Arrhenius plot. A theoretical model is presented which gives a semiquantitative fit to all the features observed in the experimental data. The model involves quantum-mechanical tunnelling of a thermal distribution of carriers through an image-force lowered triangular potential shape. At low reverse bias, the apparent barrier height decreases due to image-force lowering alone and the prevailing carrier transport mechanism is drift/diffusion or thermionic emission over the barrier, which can be determined from the bias dependence of the conduction prefactor in the Arrhenius plots. At higher fields, the apparent barrier height decreases faster than the image-force lowering. This is due to tunnelling of carriers through (the top of) the potential barrier and the apparent barrier becomes approximately equal to the mean energy at which the carriers move through the barrier. This energy is lowered with increasing reverse bias. The conduction prefactor from the Arrhenius plot now decreases with increasing applied bias and gives an indication of the effective tunnel probability.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1548-1551 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current transport through good quality undoped silicon-rich silicon nitride is normally limited by the contacts. However, if the concentration of silicon dangling bonds is increased by current stressing or raising the nitrogen content, current transport becomes bulk controlled and well described by the Poole–Frenkel effect in a defect band. Using thin-film diode structures on either p-type or n-type silicon substrates, we show that the I/V characteristics can only be explained if current transport in the defect bands within the silicon-rich nitride is via the movement of holes. Hole transport through defect states is probably a common feature in all the amorphous silicon-rich alloys. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2694-2703 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing characteristics of shallow (Rp 〈20 nm) arsenic- and boron-implanted layers were found to be a complex function of the thermal cycle which the sample experienced. Arsenic at 10 keV and boron at 4.5 keV (derived from 20 keV BF+2 ) were implanted in the dose range 1014–1016 cm−2 into (100) Si. The optimal implant doses to maximize conductivity with essentially undiffused layers of device quality material were 2 × 1015 and 1015 cm−2 for As and B, respectively. A comparison of rapid isothermal annealing using the multiple-scan electron-beam annealing method and conventional furnace annealing was made. For arsenic minimum resistivities of about 2 × 10−4 Ω cm were obtained after furnace annealing at 550 °C for 15 min or electron-beam annealing with a peak temperature between about 700 and 1100 °C during a 100 ms (or 1 s) anneal. For boron, electron-beam annealing for 100 ms (or 1 s) with a peak temperature of between ∼700 and 1000 °C produced a resistivity of 7 × 10−4 Ω cm which compared with 1.2 × 10−3 Ω cm following conventional furnace annealing. High-resolution SIMS showed that peak temperatures of up to about 1000 and 1100 °C for B and As layers, respectively, may be reached with essentially no diffusion. An extension of diffusion theory applicable to conventional furnace annealing of deeper implant gave results in accord with SIMS profiles.
    Type of Medium: Electronic Resource
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