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  • 1
    Electronic Resource
    Electronic Resource
    Quantum dot heterostructures: Fabrication, properties, lasers (Review) (1998)
    Springer
    Semiconductors 32 (1998), S. 343-365 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract In the present review we summarize original results where 1) we have experimentally discovered a novel class of spontaneously ordered nanostructures, namely equilibrium arrays of threedimensional, coherently strained islands on crystal surfaces; 2) we have developed a theory of spontaneous formation of semiconductor nanostructures in heteroepitaxial systems; 3) we have experimentally demonstrated the existence of a novel class of semiconductor heterostructures, namely perfect quantum dots having an atom-like energy spectrum; we have performed a detailed investigation of the optical properties of quantum dots; 4) we have fabricated quantum dot-based injection lasers demonstrating unique charactristics, namely high-temperature stability of the threshold current and ultra-high material gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187396
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Spontaneously forming periodic composition-modulated InGaAsP structures (1999)
    Springer
    Semiconductors 33 (1999), S. 510-513 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract InGaAsP epitaxial layers, which are obtained in the instability region on InP (001) and GaAs (001) substrates, are investigated by photoluminescence and transmission-electronmicroscopy methods. The results are discussed on the basis of the theory of spinodal decomposition of solid solutions. It is established experimentally that in certain temperature and composition ranges the solid solutions InGaAsP are a system of charged, alternating (in mutually perpendicular directions [100] and [010]) domains of a solid solution with two different compositions and different lattice constants. The domain structure is very clearly defined at the surface of the epitaxial film and becomes blurred in the film near the substrate. The data obtained very likely show spinodal decomposition of the solid solutions InGaAsP in the test samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187719
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Structural characterization of self-organized nanostructures (1998)
    Springer
    Physics of the solid state 40 (1998), S. 781-783 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Self-organized nano-objects fabricated in different semiconductor systems are currently at the focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high-resolution electron microscopy have been used to study the InAs quantum dots grown by molecular-beam epitaxy (MBE) on GaAs and InP substrates. Optimal imaging conditions for visualization of quantum dots were established. Size, shape, and stability of the equilibrium island arrays were analyzed with respect to the growth conditions. Both decrease and increase of the As pressure compared to the optimal value were shown to destroy the regular arrangement of the islands. Energy benefit due to the strain relaxation in the InAs islands is likely to be the driving force for their formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130394
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Spontaneously assembling periodic composition-modulated InGaAsP structures (1999)
    Springer
    Semiconductors 33 (1999), S. 1010-1012 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract It is established theoretically and experimentally that in certain temperature and composition ranges the solid solutions InGaAsP comprise a system of strained, alternating (in mutually perpendicular directions [100] and [010]) domains of a solid solution with two different compositions and different lattice constants. The domains are clearly seen at the surface of an epitaxial film and wash out into its depth in the direction of the substrate. The data obtained most likely show spinodal decomposition of InGaAsP solid solutions in the experimental samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187827
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    On spinodal decomposition in elastically anisotropic epitaxial films of III-V semiconductor alloys (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7198-7210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic energy associated with alloy composition modulation in the epitaxial film of a III-V semiconductor alloy on the [001]-substrate is calculated in the analytic form. Composition modulation both in the directions parallel to the substrate surface and in the growth direction are taken into account. It is shown that the minimum of the elastic energy corresponds to the modulation along the [100]- (and/or [010]-) direction, the period of the modulation d being small compared to the film thickness h (d(very-much-less-than)h). The "soft mode'' of composition modulation is exponentially localized near the free surface, the localization length l being l=d/2π. The elastic energy caused by this modulation is less by the factor 1/2c11/(c11+c12) than the elastic energy corresponding to spinodal decomposition in the bulk sample. This factor is ≈1/3 for III-V alloys. Critical temperatures of spinodal decomposition Tc are calculated for a number of epitaxial ternary III-V alloys. The diffusion which occurs only in the very thin subsurface layer (nearly monolayer) is shown to provide exponential amplification of the composition modulation amplitude δc(0)∼exp(Δh/l) at early stages of the subsequent layer-by-layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355037
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    Paper (German National Licenses)
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