ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The ohmic contact formation mechanism in pulsed laser beam mixed Au/Te/Au/GaAs structures has been investigated by 129I Mössbauer spectroscopy. Low-resistance, ohmic contact structures, on both n- and p-type GaAs, were found to be correlated to the formation of a high density of defect complexes consisting of tellurium atoms quasi-substitutional on arsenic sites with a gallium vacancy in the first neighbor shell. Correspondingly, the ohmic conduction is suggested to occur according to the amorphous heterojunction model, i.e., by a multi-step recombination-tunneling process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106198
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