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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed intra- and extra-cavity microwave frequency (1–100 GHz) measurements on high quality Y1Ba2Cu3O7−x superconducting thin films on (100) LaAlO3 substrates. The ∼0.3 μm thin films fabricated by the pulsed laser deposition technique exhibit superconducting transition temperatures 〉90 K, as determined by resistivity and ac susceptibility measurements, and critical current densities of 5×106 A/cm2 at 77 K. Moreover, ion beam channeling minimum yields of ∼3% were measured, indicating the extremely high crystalline quality of films grown on the LaAlO3 substrate. Microwave surface resistance values at 77 K for these films are found to be more than one to two orders of magnitude lower than for copper at 77 K for almost the entire frequency range explored. We postulate that the reason we observe such low surface resistances in these films is the virtual absence of grain and phase boundaries coupled with the high degree of crystallinity. Furthermore, we believe that the residual resistance measured below Tc is at present dominated by losses occurring in the substrate and the cavities rather than by losses intrinsic to the Y-Ba-Cu oxide superconductor.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4137-4139 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We consider the proximity effect between high-temperature superconducting cuprates and ordinary metals in the context of superconductor-normal-superconductor (S-N-S) microbridges. The theory of the proximity effect for conventional superconductors predicts that superconductivity can only be weakly induced by the coupling of the cuprates with metals such as gold or silver. Experimental investigations of this system have yielded results consistent with this prediction. We discuss the possibility of fabricating S-N-S microbridges with desirable properties by using more appropriate normal layers in the devices.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2677-2679 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A perovskite-like single-crystal substrate material has been investigated that simultaneously permits epitaxial growth of 1-2-3 superconductor films and possesses desirable rf properties of low dielectric constant and loss tangent. The lattice constant of 3.792 A(ring) provides a lattice match to within 1% of the a axis of 1-2-3. Sputtered films of erbium-barium-copper-oxide have been produced on (100) LaAlO3 substrates that exhibit sharp resistive transitions at 90 K (ΔT=1K), bulk superconductivity as determined by ac susceptibility measurements, and nearly single-crystal growth as evidenced by x-ray diffraction and high-resolution scanning electron microscopy. The high-frequency dielectric properties of LaAlO3 were experimentally investigated at several temperatures. The low-frequency dielectric constant was measured to be 15 and the microwave loss tangent ranged from 6×10−4 at room temperature to 5×10−6 at 4 K.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1109-1111 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured very low microwave losses in microstrip resonators produced in a newly developed process which deposits high-temperature Er-Ba-Cu-O superconducting films by metalorganic chemical vapor deposition on both sides of a LaAlO3 substrate. These in situ films have critical temperatures of 92 K. High Tc superconductor (HTS) linear microstrip resonators demonstrated Q's of 3500 at 10 GHz and 4.2 K, corresponding to surface resistances less than 330 μΩ, which is 45 times better than measured silver resoantors. HTS meanderline resonators with a fundamental frequency of 1.3 GHz have Q's of 9600 at 4.2 K. Identical silver meanderline circuits have 300 times more surface resistance than HTS circuits.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 234-236 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light-ion irradiation can controllably reduce the critical current density of high-temperature superconductor thin films. Reported here is the behavior of ErBa2Cu3O7 films patterned into microbridge dc superconducting quantum interference device (SQUID) structures and irradiated with a rastered high-energy focused ion beam of 70 nm diameter. The resultant SQUIDs have demonstrated up to 51% critical current modulation at 46 K. Microbridges with appropriate critical currents manifest Josephson-like behavior in the form of well-defined Shapiro steps appearing with microwave radiation. The IcRn products of these microbridges are typically a few millivolts and the temperature dependence of their normal-state resistance is consistent with conduction through metallic filaments.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 543-545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technique which permits high-yield fabrication of microbridges and low noise YBa2Cu3O7 superconducting quantum interference devices (SQUIDs) in epitaxial thin films. These SQUIDs operate over a wide temperature range extending from 4 K to close to the superconducting transition temperature. Measurements of an rf SQUID operating at 77 K give a peak-to-peak flux sensitivity of 36 μV/Φ0 and a flux noise at 10 Hz of 1.5× 10−4 Φ0/(square root of)Hz. Device yields over 80% have been obtained.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2019-2021 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown crystalline thin films of LaAlO3 using off-axis rf sputtering from a single stoichiometric target. The films grow epitaxially on SrTiO3 and LaAlO3 (100) substrates as well as on YBa2Cu3O7 thin films. We report on the growth conditions used to make these films, the properties of the films, and the properties of bilayer and trilayer structures containing both LaAlO3 and YBa2Cu3O7 films. Transmission electron microscopy cross-sectional and x-ray diffraction analyses indicate that all the constituent films in the multilayers grow epitaxially and that the interfaces between the films are sharply defined. Preliminary transport measurements on these multilayers show that LaAlO3 can be used for dielectric layers in a variety of high-temperature superconductor electronic circuits.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 3 (1990), S. 305-310 
    ISSN: 1572-9605
    Keywords: High-temperature superconductor ; microwave filter
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Microwave properties of high-temperature films deposited on LaAlO3 substrate are presented. The films are grownin situ using a high-pressure single-source sputtering technique. Microwave resonators and filters are fabricated and tested. The maximum measuredQ values are 1400; the surface resistances were less than 360μΩ between 4.2 and 50 K. The filter performance was 18 dB better than a similar filter fabricated in Ag.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1572-9605
    Keywords: Erbium-barium-copper-oxide ; sputtering ; buffered substrates ; multisource sputtering ; silicon substrates ; SNMS ; depth profiling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract High-quality superconducting films of erbium-barium-copper-oxide have been produced in a multisource sputtering system on a variety of substrates, including buffered sapphire and silicon wafers as well as various single-crystal materials. Fine-grained polycrystalline films with narrow (〈4 K) resistive transitions have been grown on a number of different substrates. The use of erbium in the 12–3 compound leads to improved film morphology and to more forgiving conditions for establishing of the superconducting phase. Sputtered neutral mass spectroscopy (SNMS) yields useful information about the compositional profile of the films.
    Type of Medium: Electronic Resource
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