ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC epilayer channel MOSFETs are fabricated. The MOSFETs have an n- epilayerchannel which improves the surface where the MOS channel is formed. By the optimization of theepilayer channel and the MOSFET cell structure, an ON-resistance of 12.9 m[removed info]cm2 is obtained atVG = 12 V (Eox = 2.9 MV/cm). A normally-OFF operation and stable avalanche breakdown isobtained at the drain voltage larger than 1.2 kV. Both the ON-resistance and the breakdown voltageincrease slightly with an increase in temperature. This behavior is favorable for high poweroperation. By the evaluation of the control MOSFETs with n+ implanted channel, the resistivity ofthe MOS channel is estimated. The MOS channel resistivity is proportional to the channel lengthand it corresponds to an effective channel mobility of about 20 cm2/Vs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1285.pdf
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