ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETsand SiC-SBDs, and their switching characteristics are evaluated using a double pulse method.Switching waveforms show that both overshoot and tail current, which induce power losses, aresuppressed markedly compared with conventional Si-IGBT modules with similar ratings. The totalswitching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modulesis measured to be about 30% of that of Si-IGBT modules under the generally-used switchingcondition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decreasein gate resistance, namely switching speed. The result shows the potential of unipolar device SiCpower modules
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1289.pdf
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