Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 5258-5263
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Experimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0〈x〈0.13. Calculations of the hole mobility in Si and in Si1−xGex and comparison with experimental results allow us to estimate the averaged scattering potential of the randomly distributed Ge atoms to be 0.55 eV. From Hall effect and capacitance–voltage measurements, a Hall factor around 0.8 at T=300 K is derived. Hall effect measurements in the temperature range 20–300 K enable us to determine the boron acceptor activation energy, which decreases from 45 meV at x=0 down to 32 meV for x=0.13, and to estimate the hole effective masses to be meff/m0(approximate)0.45. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367348
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