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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 1196-1197 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A simple mean-field model of azimuthal ordering in Langmuir monolayers induced by anisotropic dispersion forces is presented. The approach is removed from previous studies of this interaction in systems of grafted rods insofar as the tilt of amphiphiles is decoupled from azimuthal ordering and treated as an external variable. We examine the phase space of fixed tilt against temperature, finding that azimuthal ordering is second order for most tilts, except in the range 57°–66°, where it is first order. This is related to the existence of three different types of azimuthal order; polar, nematic, and polar–nematic. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4801-4805 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the light output properties of single mode lasers having cavity dimensions on the order of the emitted wavelength. A simple rate equation formula is derived for a four-level laser assuming enhanced spontaneous emission into the cavity. These rate equation analyses show that increasing the coupling of spontaneous emission into the cavity mode causes the lasing properties to become quite different from those of usual lasers having cavity dimensions much larger than a wavelength. We find that the lasing threshold disappears, the light emission efficiency increases, relaxation oscillations do not occur, and the dynamic response speed is improved. It is shown that the spontaneous emission rate alteration caused by the cavity plays an essentially important role for these characteristics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4520-4526 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the anchoring energy function, i.e., the anisotropic part of the interfacial free energy, at a nematic liquid crystal-wall interface can be determined uniquely without a numerical fitting procedure, when the integrated birefringence of a liquid crystal cell with a thickness much larger than the extrapolation length is measured as a function of an electric or magnetic field well above the Freedericksz threshold. The precision of the present method is closely argued, showing that the resulting anchoring energy function is reasonably insensitive to the uncertainties in the material parameters and in the cell thickness. As an example, the anchoring energy function at the interface between 5CB(pentylcyanobiphenyl) and an obliquely evaporated SiO was determined for the first time, by measuring the birefringence and the capacitance of a 56-μm-thick cell up to 150 V rms at 0.23 °C below the clearing temperature. A saturation of the field-induced distortion was clearly observed at about 100 V rms. The anchoring energy function was found to be well fitted by a function of the form (1)/(2) Ea sin2 θ+ (1)/(4) E1 sin4 θ, where θ is the angle between the boundary director and the substrate, with Ea ∼4.0×10−5 J/m2 and E1∼−1.8×10−5 J/m2.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4755-4758 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study for evaluating the effect of introducing short-period superlattice waveguide layers on the threshold current of single quantum-well diode lasers is reported. The waveguide layers which consist of short-period GaAs/AlAs superlattices, in place of AlGaAs alloys, resulted in a decrease by a factor of 4–6 in the lasing threshold current density of GaAs/AlGaAs single quantum-well diode lasers of separate confinement heterostructure. A time-resolved photoluminescence study of those laser structures revealed that the threshold current reduction was the result of an improvement of overall nonradiative carrier recombination lifetime of single quantum wells by more than a factor of 10.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 374-379 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniformity of surface layer characteristics of InAlAs Schottky diodes, the so-called level-shift diodes, on InAlAs/InGaAs high electron mobility transistors is noninvasively examined by photoreflectance (PR) spectroscopy, on-wafer mapping of PR signal intensity at a particular wavelength, and analyzed data. From the observed Franz–Keldysh oscillations, we have been able to evaluate the built-in dc electric fields in the i–n+, or so-called UN+, InAlAs Schottky diode layer. The on-wafer fluctuation of the electric fields in the diode layer, which is due to the fluctuation of the thickness of the diode layer, is clearly visualized by on-wafer mapping. Nonuniform composition of the InAlAs diode layers is also observed. The shape of the contour lines in the map of the PR signal intensity is related to the structure of the growth equipment. Our results suggest that photoreflectance mapping is quite effective for noninvasive screening of device epiwafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2598-2600 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study on spontaneous and stimulated emission properties of planar optical microcavities confining an organic dye solution is reported. The lasing threshold in an input-output curve became indistinct by decreasing the distance between a pair of dielectric reflectors. The coupling ratio of spontaneous emission into a laser mode was as large as 0.2 for a cavity half a wavelength distance. Differences between the spontaneous emission dominant regime and the stimulated emission dominant regime were also examined with emission spectra and emission lifetime measurements.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2408-2413 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric photoacoustic (PA) measurements on liquid-encapsulated-Czochralski-grown n-GaAs were carried out at room temperature. A continuous broad band below 1.35 eV and a peak at 1.383 eV were observed in the PA amplitude spectra. By comparing with the optical-absorption spectra, it is concluded that the broad band is due to the electron transition involving the EL2 deep-lying defect levels. For the observed peak at 1.383 eV, the origin is considered to be dislocation related. The possibility that this peak is an apparent one expected from the proposed models for the PA signal generation is denied.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 663-665 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The photoluminescence decay of GaAs/AlGaAs quantum wells was successfully measured at room temperature by using 660-nm picosecond light pulses from an AlGaInP diode laser driven by short pulse current. Our experimental results reveal that picosecond light pulses from visible diode lasers may be widely applicable, in place of mode-locked gas, solid-state, or dye lasers, for studying the fast carrier recombination properties of many kinds of materials including GaAs and AlGaAs in the wavelength region of deep red to infrared.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4280-4282 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle size effects on magnetic properties of BaFe12−2xTixCoxO19 fine particles were investigated. Saturation magnetization of these particles decreased with decreasing particle size. This result can be explained with the existence of a nonmagnetic thin layer, several angstroms in thickness, on the surface of the particles. Particle size dependence of coercivity for these particles, below 1000 A(ring) in size, follows the superparamagnetism theory. For the decrease in coercivity above 2000 A(ring), multidomain nucleation is inferred as one of the possible mechanisms. Particle shape dependence of coercivity is well explained with the coherent rotation model, considering shape anisotropy.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4501-4518 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The out-of-plane anchoring strength at the interface between 4-n-pentyl-4'-cyanobiphenyl (5CB) and an obliquely evaporated SiO was measured as a function of temperature by applying the "high-electric-field technique'' recently developed by Yokoyama and van Sprang [J. Appl. Phys. 57, 4520 (1985)]. The orientational "extrapolation length''de for the interface was found to remain virtually constant at about 30 nm up to nearly 1 K below the clearing temperature Tc=308.4 K. At temperatures closer to Tc, however, it was observed to show an apparently critical increase, which approximately follows de∝[(Tc−T)/Tc]−0.45. At 0.043 K below Tc, de=183±3 nm, yielding the anchoring energy of (1.13±0.03)×10−5 J/m2. The implications of the observed temperature dependence are first investigated by extending Gibbs' surface thermodynamics to a nematic-wall interface, deriving a general relationship between the temperature variation of de and the surface excess entropy. In particular, it is concluded on thermodynamic grounds that the exponent of −0.45 can never be associated with a real critical behavior, but is indicative of the occurrence of crossover to a more singular or noncritical behavior. To draw specific connections between the temperature dependence of de and the orientational order near the interface,we develop a simple statistical mechanical theory of the anchoring strength, based on a van der Waals picture of the nematic-wall interface. We show that the extrapolation length consists of two essentially distinct contributions: one is from the anisotropic interactions at the interface and the other is unconventionally from the interfacial inhomogeneity of the order parameter itself. For the most relevant cases, the van der Waals theory states that a reduction of the anchoring strength should always be accompanied by a depression of the surface order parameter. By comparing the theory with the experiment, the surface order parameters just below and above Tc are found to be 0.04 and 0.01, respectively, in agreement with the estimates from the contact angle and the pretransitional birefringence experiments. It is also argued, based on the present model, that the order parameter inhomogeneity is predominantly responsible for the quasicritical behavior of the anchoring strength.
    Type of Medium: Electronic Resource
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